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BTA08-600BW3G 반도체 회로 부품 판매점

Triacs



ON Semiconductor 로고
ON Semiconductor
BTA08-600BW3G 데이터시트, 핀배열, 회로
BTA08-600BW3G,
BTA08-800BW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
Blocking Voltage to 800 V
On-State Current Rating of 8 A RMS at 80°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt 2000 V/ms minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
High Commutating dI/dt 1.5 A/ms minimum at 125°C
Internally Isolated (2500 VRMS)
These Devices are PbFree and are RoHS Compliant*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage (Note 1)
(TJ = 40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
BTA08600BW3G
BTA08800BW3G
VDRM,
VRRM
600
800
V
On-State RMS Current
IT(RMS)
(Full Cycle Sine Wave, 60 Hz, TC = 80°C)
8.0
A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TC = 25°C)
Circuit Fusing Consideration (t = 8.3 ms)
ITSM
I2t
90 A
36 A2sec
NonRepetitive Surge Peak OffState
Voltage (TJ = 25°C, t = 10ms)
VDSM/
VRSM
VDSM/VRSM
+100
V
Peak Gate Current (TJ = 125°C, t = 20ms) IGM 4.0 A
Peak Gate Power
(Pulse Width 1.0 ms, TC = 80°C)
PGM 20 W
Average Gate Power (TJ = 125°C)
PG(AV)
1.0
W
Operating Junction Temperature Range
TJ 40 to +125 °C
Storage Temperature Range
Tstg 40 to +150 °C
RMS Isolation Voltage
(t = 300 ms, R.H. 30%, TA = 25°C)
Viso 2500 V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
TRIACS
8 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
G
4 MARKING
DIAGRAM
123
TO220AB
CASE 221A
STYLE 12
BTA08xBWG
AYWW
x = 6 or 8
A = Assembly Location (Optional)*
Y = Year
WW = Work Week
G = PbFree Package
* The Assembly Location code (A) is optional. In
cases where the Assembly Location is stamped
on the package the assembly code may be blank.
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 No Connection
ORDERING INFORMATION
Device
BTA08600BW3G
Package
TO220AB
(PbFree)
Shipping
50 Units / Rail
BTA08800BW3G TO220AB 50 Units / Rail
(PbFree)
© Semiconductor Components Industries, LLC, 2012
September, 2012 Rev. 1
1
Publication Order Number:
BTA08600BW3/D


BTA08-600BW3G 데이터시트, 핀배열, 회로
BTA08600BW3G, BTA08800BW3G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoCase (AC)
JunctiontoAmbient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 seconds
Symbol
RqJC
RqJA
TL
Value
2.5
63
260
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
Peak On-State Voltage (Note 2)
(ITM = ± 11 A Peak)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
VTM − −
IGT
2.5
2.5
2.5
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±100 mA)
Latching Current (VD = 12 V, IG = 60 mA)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
IH − −
IL
−−
−−
−−
Gate Trigger Voltage (VD = 12 V, RL = 30 W)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
VGT
0.5
0.5
0.5
Gate NonTrigger Voltage (TJ = 125°C)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
VGD
0.2
0.2
0.2
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 125°C, No Snubber)
Critical Rate of Rise of OnState Current
(TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr 100 ns)
Critical Rate of Rise of Off-State Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
(dI/dt)c
dI/dt
dV/dt
1.5
2000
Max
0.005
2.0
1.55
50
50
50
60
70
90
70
1.7
1.1
1.1
50
Unit
°C/W
°C
Unit
mA
V
mA
mA
mA
V
V
A/ms
A/ms
V/ms
http://onsemi.com
2




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