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HAOPIN |
TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
BTA06-600C
Triacs
Description
Glass passivated triacs in a plastic envelope, intended for use in applications requiring high
bidirectional transient and blocking voltage capability and high thermal cycling performance.
Typical applications include motor control, industrial and domestic lighting,heating and static switching.
Symbol
T2 T1
Simplified outline
Pin
1
2
3
TAB
G 1 2 3 TO-220
Description
Main terminal 1 (T1)
Main terminal 2 (T2)
gate (G)
Main terminal
Applications:
Motor control
Industrial and domestic lighting
Heating
Static switching
Features
Blocking voltage to 600 V
On-state RMS current to 6 A
SYMBOL
VDRM
IT RMS
ITSM
PARAMETER
Repetitive peak off-state voltages
RMS on-state current rull sine wave
Non-repetitive peak on-state current
(full cycle,Tj initial=25 )
Value
600
6
63
Unit
V
A
A
SYMBOL
PARAMETER
Rth( j-c)
Junction to case(AC)
Rth( j-a)
Junction to ambient
CONDITIONS MIN TYP
- 2.7
MAX UNIT
- /W
- 60 -
/W
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TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
BTA06-600C
Triacs
Limiting values in accordance with the Maximum system(IEC 134)
SYMBOL PARAMETER
VDRM
IT(RMS)
Repetitive peak off-state
Voltages
RMS on-state current
ITSM
Non repetitive surge
peak on-state current
I2t I2t value for fusing
CONDITIONS
Tc=105
Tj initial =25
Tp=10ms
F=50HZ t=20ms
F=60HZ t=16.7ms
MIN
-
-
-
-
-
dI/dt
IGM
IDRM
IRRM
P G(AV )
Tstg
Tj
Critical rate of rise of
on-state current
Peak gate current
V =VDRM
RRM
V =VDRM
RRM
Average gate power
Storage temperature range
Operating junction
Temperature range
IG=2 IGT , tr 100ns
Tp=20 s
F=120HZ Tj=125
Tj=125
Tj=25
Tj=125
Tj=125
-
-
-
-
-
-40
-40
Value
600
6
60
63
21
50
4
5
1
1
150
125
UNIT
V
A
A
A
A2S
A/ s
A
A
mA
W
TJ=25OC unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
Static characteristics
IGT VD=12V; RL=30
MIN TYP MAX UNIT
I-II-III - - 25 mA
IV 50 mA
IL
IH
VGT
VGD
dV/dt
(dV/dt)c
(dI/dt)c=2.7A/ms
Dynamic Characteristics
IG=1.2 IGT
I-III-IV
II
-
-
- 40 mA
- 80 mA
IT=500mA
VD=12V; RL=30
VD=VDRM RL=3.3K
Tj=125
ALL
ALL
- - 25 mA
- - 1.3 V
0.2 - - V
VD=67%VDRM gate open;TJ=125
200 -
- V/ s
TJ=125
5 - - V/ s
VT
lTM=5.5A tp=380 s
TJ=25
VTO
Threshold voltage
TJ=125
Rd
Dynamic resistance
TJ=125
- - 1.55 V
- - 0.85 V
- - 60 m
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