T810H 반도체 회로 부품 판매점
High temperature 8 A sensitive TRIACs
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 ST Microelectronics |
www.DataSheet4U.com
T810H
High temperature 8 A sensitive TRIACs
Features
■ Medium current TRIAC
■ Logic level sensitive TRIAC
■ 150 °C max. Tj turn-off commutation
■ Clip bounding
■ RoHS (2002/95/EC) compliant packages
Applications
■ The T810H is designed for the control of AC
actuators in appliances and industrial systems.
■ The multi-port drive of the microcontroller can
control the multiple loads of such appliances
and systems through these sensitive gate
TRIACs.
Description
Specifically designed to operate at 150 °C, the
new 8 A T810H TRIACs provide an enhanced
performance in terms of power loss and thermal
dissipation. This allows the optimization of the
heatsink size, leading to space and cost
effectiveness when compared to electro-
mechanical solutions.
Based on ST logic level technology, they offer an
IGT lower than 10 mA and specified minimal
commutation and high noise immunity levels valid
up to the Tj max.
A2
G
A1
A2
A2
A2 G
A1
D2PAK
T810H-6G
G
A2
A1
TO-220AB
T810H-6T
Table 1. Device summary
Symbol
Value
IT(RMS)
VDRM/VRRM
IGT MAX
8
600
10
Unit
A
V
mA
May 2009
Doc ID 15714 Rev 1
1/10
www.st.com
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1 Characteristics
T810H
Table 2. Absolute maximum ratings
Symbol
Parameter
IT(RMS) On-state rms current (full sine wave)
ITSM
I²t
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25 °C)
I²t Value for fusing
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
VDSM/VRSM
Non repetitive surge peak off-state
voltage
D2PAK, TO-220AB Tc = 135 °C
F = 60 Hz
t = 16.7 ms
F = 50 Hz
t = 20 ms
tp = 10 ms
F = 120 Hz
Tj = 150 °C
tp = 10 ms
Tj = 25 °C
IGM
PG(AV)
Tstg
Tj
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
tp = 20 µs
Tj = 150 °C
Tj = 150 °C
Value
8
84
80
42
50
VDRM/VRRM
+ 100
4
1
- 40 to + 150
- 40 to + 150
Unit
A
A
A²s
A/µs
V
A
W
°C
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
Quadrant
Min
IGT
VGT
VGD
IH (1)
VD = 12 V RL = 33 Ω
VD = VDRM, RL = 3.3 kΩ
IT = 100 mA
IL IG = 1.2 IGT
dV/dt (1) VD = 67% VDRM, gate open, Tj = 150 °C
(dI/dt)c (1) Logic level, 0.1 V/µs, Tj = 150 °C
Logic level, 15 V/µs, Tj = 150 °C
1. For both polarities of A2 referenced to A1.
I - II - III
I - II - III
I - II - III
I - III
II
1
0.15
75
11.4
3.0
Max.
10
1.0
25
30
35
Unit
mA
V
V
mA
mA
V/µs
A/ms
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T810H triac
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