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PDF BCR3AS-12B Data sheet ( Hoja de datos )
| Número de pieza | BCR3AS-12B | |
| Descripción | Triac Low Power Use | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BCR3AS-12B (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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BCR3AS-12B
Triac
Low Power Use
(The product guaranteed maximum junction temperature of 150°C)
Features
www.DataSheet•4U.cITo(mRMS) : 3 A
• VDRM : 600 V
• IFGT I, IRGT I, IRGT III : 15 mA
Outline
• Non-Insulated Type
• Planar Passivation Type
REJ03G0450-0300
Rev.3.00
Nov 30, 2007
RENESAS Package code: PRSS0004ZA-A
(Package name: MP-3A)
4
2, 4
12 3
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
4. T2 Terminal
Applications
Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blanket, control of
household equipment such as washing machine, and other general purpose control applications
Warning
1. Refer to the recommended circuit values around the triac before using.
2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum
junction temperature of 125°C will be supplied.
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
REJ03G0450-0300 Rev.3.00 Nov 30, 2007
Page 1 of 7
1 page  
BCR3AS-12B (The product guaranteed maximum junction temperature of 150°C)
www.DataSheet4U.com
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120140 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140 Tj = 125°C
120
100 III Quadrant
80
60
I Quadrant
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
140 Tj = 150°C
120
100
80
60
I Quadrant
40
III Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/µs)
Commutation Characteristics (Tj=150°C)
7
5 Main Voltage
Time Typical Example
(dv/dt)c
VD Tj = 150°C
3
Main Current
IT
2
τ
(di/dt)c
Time
IT = 4A
τ = 500µs
VD = 200V
101 f = 3Hz
7 III Quadrant
5
3
2
100
7100
23
I Quadrant
Minimum
Characteristics
Value
5 7 101 2 3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Commutation Characteristics (Tj=125°C)
7
5 Main Voltage
Time Typical Example
(dv/dt)c
VD Tj = 125°C
3
2
Main Current
IT
τ
(di/dt)c
Time
IT = 4A
τ = 500µs
VD = 200V
101 f = 3Hz
7
5
3 Minimum
2
Characteristics
Value
III Quadrant
100
7
100
I Quadrant
2 3 5 7 101
23
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7 Typical Example
5 IRGT III
4
3
IRGT I
2 IFGT I
102
7
5
4
3
2
101
100 2 3 4 5 7 101 2 3 4 5 7 102
Gate Current Pulse Width (µs)
REJ03G0450-0300 Rev.3.00 Nov 30, 2007
Page 5 of 7
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BCR3AS-12B.PDF ] | |
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