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Renesas Technology |
BCR8KM-16LA
Triac
Medium Power Use
Features
• IT (RMS) : 8 A
• VDRM : 800 V
www.DataSheet•4U.cIFoGmTI , IRGTI, IRGTⅢ : 30 mA
• Viso : 2000 V
Outline
TO-220FN
1
23
REJ03G0336-0100
Rev.1.00
Aug.20.2004
• Insulated Type
• Planar Passivation Type
• UL Recognized : Yellow Card No. E223904
File No. E80271
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Switching mode power supply, washing machine, motor control, heater control, and other general purpose control
applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
16
800
960
Unit
V
V
Rev.1.00, Aug.20.2004, page 1 of 7
BCR8KM-16LA
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
www.DataSheeMt4Uas.csom
Isolation voltage
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
Ratings
8
80
26
5
0.5
10
2
– 40 to +125
– 40 to +125
2.0
2000
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 89°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Electrical Characteristics
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Repetitive peak off-state current
IDRM
—
— 2.0 mA Tj = 125°C, VDRM applied
On-state voltage
VTM — — 1.6 V Tc = 25°C, ITM = 12 A,
Instantaneous measurement
Gate trigger voltageNote2
Ι VFGTΙ — — 1.5 V Tj = 25°C, VD = 6 V, RL = 6 Ω,
ΙΙ VRGTΙ — — 1.5 V RG = 330 Ω
Gate trigger currentNote2
ΙΙΙ VRGTΙΙΙ
Ι IFGTΙ
ΙΙ IRGTΙ
—
—
—
— 1.5
V
— 30 mA Tj = 25°C, VD = 6 V, RL = 6 Ω,
— 30 mA RG = 330 Ω
ΙΙΙ IRGTΙΙΙ — — 30 mA
Gate non-trigger voltage
Thermal resistance
VGD 0.2 — — V Tj = 125°C, VD = 1/2 VDRM
Rth (j-c)
—
— 3.6 °C/W Junction to caseNote3
Critical-rate of rise of off-state
commutating voltageNote4
(dv/dt)c 10
—
— V/µs Tj = 125°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 4 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
Rev.1.00, Aug.20.2004, page 2 of 7
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