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Renesas Technology |
BCR5PM-12LG
Triac
Medium Power Use
Features
• IT (RMS) : 5 A
www.DataSheet••4U.cIVFoGDmTRIM,
: 600
IRGTI,
V
IRGT
III
:
20
mA
• Viso : 2000 V
Outline
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F )
REJ03G1507-0200
Rev.2.00
Mar 06, 2007
• The Product guaranteed maximum junction
temperature 150°C
• Insulated Type
• Planar Type
• UL Recognized : Yellow Card No. E223904
File No.E80271
12 3
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Switching mode power supply, light dimmer, electronic flasher unit, Television, Stereo system, refrigerator, Washing
machine, infrared kotatsu, and carper, solenoid driver, small motor control, copying machine, electric tool, electric
heater control, and other general purpose control applications
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
Rev.2.00 Mar 06, 2007 page 1 of 7
BCR5PM-12LG
Parameter
RMS on-state current
Surge on-state current
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
www.DataSheetI4sUo.lcaotimon voltage
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
Ratings
5
50
10.4
5
0.5
10
2
–40 to +150
–40 to +150
2.0
2000
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 113°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1 • T2 • G terminal to case
Electrical Characteristics
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Repetitive peak off-state current IDRM — — 2.0 mA Tj = 150°C, VDRM applied
On-state voltage
VTM — — 1.8 V Tc = 25°C, ITM = 7 A,
instantaneous measurement
Gate trigger voltageNote2 Ι VFGTΙ
ΙΙ VRGTΙ
—
—
— 1.5
— 1.5
V Tj = 25°C, VD = 6 V, RL = 6 Ω,
V RG = 330 Ω
ΙΙΙ VRGTΙΙΙ
—
— 1.5
V
Gate trigger curentNote2 Ι IFGTΙ
—
—
20 mA Tj = 25°C, VD = 6 V, RL = 6 Ω,
ΙΙ IRGTΙ
—
—
20 mA RG = 330 Ω
ΙΙΙ IRGTΙΙΙ
—
—
20 mA
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltageNote4
VGD
Rth (j-c)
(dv/dt)c
0.2/0.1
—
5/1
—
—
—
— V Tj = 125°C/150°C, VD = 1/2 VDRM
4.9 °C/W Junction to caseNote3
— V/µs Tj = 125°C/150°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (j-c) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –2.5 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
Rev.2.00 Mar 06, 2007 page 2 of 7
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