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Número de pieza | BCR2PM-12RE | |
Descripción | Triac Low Power Use | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BCR2PM-12RE (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! BCR2PM-12RE
Triac
Low Power Use
Features
• IT (RMS) : 2 A
• VDRM : 600 V
www.DataSheet•4U.cIRoGmTI, IRGT : 10 mA
Outline
RENESAS Package code: PRSS0003AA-B
(Package name: TO-220F(2) )
REJ03G1468-0100
Rev.1.00
Jul 31, 2006
• Insulated Type
• Planar Passivation Type
• The product guaranteed maximum junction
temperature 150°C.
12 3
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Electric rice cooker, electric pot, and controller for other heater
Precautions on Usage
When the BCR2PM-12RE is used, do not attach the heat radiating fin.
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
Rev.1.00 Jul 31, 2006 page 1 of 6
1 page BCR2PM-12RE
www.DataSheet4U.com
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
(Tj = 125°C)
160
Typical Example
140 Tj = 125°C
120
I Quadrant
100
80
60
III Quadrant
40
20
0
100 2 3 5 7101 2 3 5 7102 2 3 5 7 103
Rate of Rise of Off-State Voltage (V/µs)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7 Typical Example
5
IRGT I
3
2
102 IRGT III
7
5
3
2
101
100 2 3 5 7 101 2 3 5 7 102
Gate Current Pulse Width (µs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
(Tj = 150°C)
160
Typical Example
140 Tj = 150°C
120
I Quadrant
100
80
60 III Quadrant
40
20
0
100 2 3 5 7101 2 3 5 7102 2 3 5 7103
Rate of Rise of Off-State Voltage (V/µs)
Gate Trigger Characteristics Test Circuits
6Ω 6Ω
6V A
6V A
V 330 Ω
V 330 Ω
Test Procedure II
Test Procedure III
Rev.1.00 Jul 31, 2006 page 5 of 6
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet BCR2PM-12RE.PDF ] |
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BCR2PM-12RE | Triac Low Power Use | Renesas Technology |
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