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T2323 반도체 회로 부품 판매점

(T2322 / T2323) SENSITIVE GATE TRIACs



Motorola Semiconductors 로고
Motorola Semiconductors
T2323 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by T2322/D
Sensitive Gate Triacs
Silicon Bidirectional Triode Thyristors
. . . designed primarily for ac power switching. The gate sensitivity of these triacs
permits the use of economical transistorized or integrated circuit control circuits, and
it enhances their use in low-power phase control and load-switching applications.
Very High Gate Sensitivity
Low On-State Voltage at High Current Levels
Glass-Passivated Chip for Stability
Small, Rugged Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
T2322
T2323
Series *
*Motorola preferred devices
SENSITIVE GATE TRIACs
2.5 AMPERES RMS
200 thru 600 VOLTS
MT2
G
MT2
MT1
MT2 MT1 CASE 77-08
G (TO-225AA)
STYLE 5
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Suffix
Peak Repetitive Off-State Voltage(1)
(TJ = 25 to 100°C, Gate Open)
T2322, T2323
B
D
Mwww.DataSheet4U.com
RMS On-State Current (TC = 70°C)
(Full-Cycle Sine Wave 50 to 60 Hz)
Symbol
VDRM
IT(RMS)
Value
200
400
600
2.5
Unit
Volts
Amps
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz)
Circuit Fusing
(t = 8.3 ms)
ITSM
I2t
25 Amps
2.6 A2s
Peak Gate Power (1 µs)
Average Gate Power (TC = 60°C + 38.3 ms)
Peak Gate Current (1 µs)
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque (6-32 Screw)(2)
PGM
PG(AV)
IGM
TJ
Tstg
10
0.15
0.5
–40 to +110
–40 to +150
8
Watts
Watt
Amp
°C
°C
in. lb.
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. Torque rating applies with use of torque washer (Shakeproof WD19523 or equivalent). Mounting Torque in excess of 6 in. lb. does not
appreciably lower case-to-sink thermal resistance. Main terminal 2 and heat-sink contact pad are common.
For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C, for 10 seconds.
Consult factory for lead bending options.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1


T2323 데이터시트, 핀배열, 회로
T2322 T2323 Series
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Case
RθJC
3.5
Thermal Resistance, Junction to Ambient
RθJA
60
ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Characteristic
Symbol
Min Typ
Peak Blocking Current
(VD = Rated VDRM, Gate Open)
Peak On-State Voltage*
(ITM = 10 A)
TJ = 25°C
TJ = 100°C
T2323 Series
T2322 Series
IDRM
VTM
——
— 0.2
— 1.7
— 1.7
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 30 )
All Modes
MT2(+), G(+); MT2(–), G(–)
MT2(+), G(–); MT2(–),I G(+)
T2322 Series
T2323 Series
T2323 Series
IGT
——
——
——
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 30 , TC = 25°C)
(VD = VDRM, RL = 125 , TC = 100°C)
Holding Current
(VD = 12 V, ITM = 150 mA, Gate Open)
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 10 A pk, IG = 60 mA)
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, TC = 100°C)
Critical Rate-of-Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 3.5 A pk, Commutating
di/dt = 1.26 A/ms, Gate Unenergized, TC = 90°C)
p p*Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
VGT
IH
tgt
dv/dt
dv/dt(c)
—1
0.15 —
— 15
— 1.8
10 100
14
Unit
°C/W
°C/W
Max Unit
10 µA
0.75 mA
Volts
2.6
2.2
mA
10
25
40
Volts
2.2
30 mA
2.5 µs
— V/µs
— V/µs
2 Motorola Thyristor Device Data




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