T2550H 반도체 회로 부품 판매점
Snubberless high temperature 25 A Triacs
|
|
 ST Microelectronics |
www.DataSheet4U.com
T2550H
Snubberless™ high temperature 25 A Triacs
Main features
A2
Symbol
IT(RMS)
VDRM/VRRM
IGT (Q1)
Value
25
600
50
Unit
A
V
mA
G
A1
A2
Description
Specifically designed for use in high temperature
environment (found in hot appliances such as
cookers, ovens, hobs, electric heaters, coffee
machines...), the new 25 A T2550H triacs provide
an enhanced performance in terms of power loss
and thermal dissipation. This allows for
optimization of the heatsinking dimensioning,
leading to space and cost effectivness when
compared to electro-mechanical solutions.
Based on ST snubberless technology, they offer
high commutation switching capabilities and high
noise immunity levels. And, thanks to their clip
assembly technique, they provide a superior
performance in surge current handling.
A1
A2G
T0-220AB
T2550H-600TRG
Order code
Part Number
T2550H-600TRG
Marking
T2550H600T
Table 1. Absolute maximum ratings
Symbol
Parameter
IT(RMS) RMS on-state current (full sine wave)
ITSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25° C)
I²t I²t Value for fusing
dI/dt
VDSM/VRSM
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
Non repetitive surge peak off-state
voltage
IGM
PG(AV)
Tstg
Tj
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
F = 50 Hz
F = 60 Hz
tp = 10 ms
F = 120 Hz
tp = 10 ms
tp = 20 µs
Tc = 125°C
t = 20 ms
t = 16.7 ms
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 150°C
Value
25
250
260
340
50
700
4
1
- 40 to + 150
- 40 to + 150
Unit
A
A
A²s
A/µs
V
A
W
°C
June 2006
Rev 7
1/8
www.st.com
8
Characteristics
1 Characteristics
T2550H
Table 2. Electrical Characteristics (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
Quadrant
Value
IGT (1)
VGT
VGD
IH (2)
IL
dV/dt(2)
(dI/dt)c(2)
VD = 12 V RL = 33 Ω
VD = VDRM RL = 3.3 kΩ Tj = 150° C
IT = 500 mA
IG = 1.2 IGT
VD = 67% VDRM gate open Tj = 150° C
Without snubber Tj = 150° C
I - II - III
I - II - III
I - II - III
I - II - III
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
50
1.3
0.15
75
90
500
11.1
1. minimum IGT is guaranted at 10% of IGT max.
2. for both polarities of A2 referenced to A1.
Table 3. Static Characteristics
Symbol
VT (1)
Vto (1)
Rd (1)
IDRM
IRRM
Test Conditions
ITM = 35 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM
VDRM/VRRM = 400 V
(at mains peak voltage)
Tj = 25°C
Tj = 150°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 150°C
MAX.
MAX.
MAX.
MAX.
Value
1.5
0.80
19
5
8.5
5.5
1. for both polarities of A2 referenced to A1.
Table 4. Thermal resistance
Symbol
Parameter
Value
Rth(j-c) Junction to case (AC)
0.8
Unit
mA
V
V
mA
mA
V/µs
A/ms
Unit
V
V
mΩ
µA
mA
Unit
°C/W
2/8
|
PDF 파일 내의 페이지 : 총 8 페이지
제조업체: ST Microelectronics
( stm )
T2550H triac
데이터시트 다운로드 :
[ T2550H.PDF ]
[ T2550H 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
T2550-12G
1200V 25A Snubberless Triac - STMicroelectronics
T2550-12I
1200V 25A Snubberless Triac - STMicroelectronics
T2550-12T
1200V 25A Snubberless Triac - STMicroelectronics
T2550H
Snubberless high temperature 25 A Triacs - ST Microelectronics
T2550H-600T
Snubberless high temperature 25 A Triacs - ST Microelectronics