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PDF TR16-800-125 Data sheet ( Hoja de datos )
| Número de pieza | TR16-800-125 | |
| Descripción | SILICON TRIACS | |
| Fabricantes | TRSYS | |
| Logotipo |  |
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TR16 SERIES
SILICON TRIACS
l High Current Triacs
l 16 A RMS
l Glass Passivated Wafer
l 400 V to 800 V Off-State Voltage
l 125 A Peak Current
l Max IGT of 50 mA (Quadrants 1 - 3)
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
TR16-400-125
Repetitive peak off-state voltage (see Note 1)
TR16-600-125
TR16-700-125
TR16-800-125
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)
Peak gate current
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
SYMBOL
VDRM
IT(RMS)
ITSM
IGM
TC
Tstg
TL
VALUE
400
600
700
800
16
125
±1
-40 to +110
-40 to +125
230
UNIT
V
A
A
A
°C
°C
°C
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
the rate of 400 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETE R
TEST CONDITIONS
MIN TYP MAX UNIT
IDRM
Repetitive peak
off-state current
VD = rated VDRM
IG = 0
TC = 110°C
±2 mA
Gate trigger
IGT current
Gate trigger
VGT voltage
VT On-state voltage
IH Holding current
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
ITM = ±22.5 A
Vsupply = +12 V†
Vsupply = -12 V†
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
IG = 50mA
IG = 0
IG = 0
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
(see Note 4)
Init’ ITM = 100 mA
Init’ ITM = -100 mA
12
-19
-16
34
0.8
-0.8
-0.8
0.9
±1.4
22
-12
50
-50
-50
2
-2
-2
2
±1.7
40
-40
mA
V
V
mA
† All voltages are with respect to Main Terminal 1.
NOTE 4: This parameter must be measured using pulse techniques, tp = £ 1 ms, duty cycle £ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
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