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BCR1AM-12 반도체 회로 부품 판매점

Lead-Mount Triac 1 Ampere/400-600 Volts



Powerex Power Semiconductors 로고
Powerex Power Semiconductors
BCR1AM-12 데이터시트, 핀배열, 회로
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272
BCR1AM
Lead-Mount Triac
1 Ampere/400-600 Volts
OUTLINE DRAWING
B
B
A
E
E
ŒŽ
CIRCUMSCRIBE
CIRCLE F - DIA.
CONNECTION DIAGRAM
ΠT1 TERMINAL
 T2 TERMINAL
Ž GATE TERMINAL
D
C

Ž
Œ
Outline Drawing (Conforms to JEDEC TO-92)
Dimensions
A
B
C
D
E
F
Inches
0.45 Min.
0.20 Max.
0.15 Max.
0.05
0.05
0.028 Dia.
Millimeters
12.5 Min.
5.0 Max.
3.9 Max.
1.3
1.25
0.7 Dia.
Description:
A triac is a solid state silicon
AC switch which may be gate
triggered from an off-state to an
on-state for either polarity of
applied voltage.
Features:
Glass Passivation
Applications:
AC Switch
Ordering Information:
Example: Select the complete
seven or eight digit part number
you desire from the table - i.e.
BCR1AM-8 is a 400 Volt,
1 Ampere Triac.
VDRM
Type Volts
Code
BCR1AM
400
600
-8
-12
T-1


BCR1AM-12 데이터시트, 핀배열, 회로
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272
BCR1AM
Lead-Mount Triac
1 Ampere/400-600 Volts
Absolute Maximum Ratings, Ta = 25 °C unless otherwise specified
Ratings
Symbol
BCR1AM-8
Repetitive Peak Off-state Voltage (Gate Open)
Non-repetitive Peak Off-state Voltage (Gate Open)
On-state Current, Ta = 56°C
Non-repetitive Peak Surge, One Cycle (60 Hz)
Non-repetitive Peak Surge, One Cycle (50 Hz)
I2t for Fusing, t = 8.3 msec
VDRM
VDSM
IT(RMS)
ITSM
ITSM
I2t
400
500
1
10
9.1
0.4
Peak Gate Power Dissipation, 20 sec
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Storage Temperature
Operating Temperature
Weight
PGM
PG(avg)
IGM
VGM
Tstg
Tj
1
0.1
1
6
-40 to 125
-40 to 125
0.23
Electrical and Thermal Characteristics, Tj = 25 °C unless otherwise specified
Characteristics*
Gate – Parameters
DC Gate Trigger Current
Symbol
Test Conditions (Trigger Mode)
VD RL RG Tj
MT2+ Gate+
6V 633025°C
MT2+ Gate–
MT2– Gate–
IGT 6V 633025°C
6V 633025°C
MT2– Gate+
6V 633025°C
DC Gate Trigger Voltage
MT2+ Gate+
6V 633025°C
MT2+ Gate–
MT2– Gate–
VGT
6V 633025°C
6V 633025°C
MT2– Gate+
6V 633025°C
DC Gate Non-trigger Voltage
All
VGD
1/2 VDRM
*Characteristic values apply for either polarity of Main Terminal 2 referenced to Main Terminal 1.
– 125°C
Characteristics
Thermal Resistance, Junction-to-case
Steady State Thermal Resistance,
Junction-to-ambient
Voltage – Blocking State
Repetitive Off-state Current
Current – Conducting State
Peak On-state Voltage
Critical Rate-of-Rise of Commutating
Off-state Voltage (Commutating dv/dt)
v (Switching)
T-2
Symbol
Rth(j-c)
Rth(j-a)
IDRM
VTM
(dv/dt)c
Test Conditions
Gate Open Circuited,
VD = VDRM, Tj = 125°C
Tc = 25°C, 8.3ms Pulsewidth
Duty Cycle <2%, ITM = 1.5A
BCR1AM-12
600
720
1
10
9.1
0.4
1
0.1
1
6
-40 to 125
-40 to 125
0.23
Units
Volts
Volts
Amperes
Amperes
Amperes
A2sec
Watts
Watts
Amperes
Volts
°C
°C
Grams
BCR1AM
Min. Typ. Max.
Units
––
––
––
––
––
––
––
––
0.1 –
5 mA
5 mA
5 mA
10 mA
2 Volts
2 Volts
2 Volts
2 Volts
– Volts
Min. Typ. Max. Units
– – 50 °C/W
– – 120 °C/W
– – 1 mA
– – 1.6 Volts
– – – V/s




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제조업체: Powerex Power Semiconductors

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BCR1AM-12 triac

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전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

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