BT132 반도체 회로 부품 판매점
Triacs logic level
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 NXP Semiconductors |
Philips Semiconductors
Triacs
logic level
Product specification
BT132 series D
GENERAL DESCRIPTION
Glass passivated, sensitive gate
triacs in a plastic envelope, intended
for use in general purpose
bidirectional switching and phase
control applications. These devices
are intended to be interfaced directly
to microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. UNIT
VDRM
IT(RMS)
ITSM
BT132-
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state current
500D 600D
500 600
11
16 16
V
A
A
PINNING - TO92
PIN DESCRIPTION
1 main terminal 2
2 gate
3 main terminal 1
PIN CONFIGURATION
3 21
SYMBOL
T2
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
full sine wave; Tlead ≤51 ˚C
full sine wave; Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 1.5 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
over any 20 ms period
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
-500
5001
-600
6001
1
16
17.6
1.28
50
50
50
10
2
5
5
0.5
150
125
UNIT
V
A
A
A
A2s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
January 1998
1
Rev 1.000
Philips Semiconductors
Triacs
logic level
Product specification
BT132 series D
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-lead
Rth j-a
Thermal resistance
junction to lead
Thermal resistance
junction to ambient
CONDITIONS
full cycle
half cycle
pcb mounted;lead length = 4mm
MIN.
-
-
-
TYP.
-
-
150
MAX.
60
80
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
IGT Gate trigger current
IL Latching current
IH Holding current
VT On-state voltage
VGT Gate trigger voltage
ID Off-state leakage current
CONDITIONS
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
VD = 12 V; IGT = 0.1 A
IT = 5 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C
VD = VDRM(max); Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
dVD/dt
tgt
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; RGK = 1 kΩ
ITM = 6 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
MIN. TYP. MAX. UNIT
- 2.0 5 mA
- 2.5 5 mA
- 2.5 5 mA
- 5.0 10 mA
- 1.6 10 mA
- 4.5 15 mA
- 1.2 10 mA
- 2.2 15 mA
- 1.2 10 mA
- 1.4 1.70 V
- 0.7 1.5 V
0.25 0.4
-
V
- 0.1 0.5 mA
MIN.
-
-
TYP. MAX. UNIT
5 - V/µs
2 - µs
January 1998
2
Rev 1.000
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BT132 triac
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