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STMicroelectronics |
BTA08, BTB08, T810, T835, T850
Snubberless™, logic level and standard 8 A Triacs
Datasheet - production data
Features
On-state rms current, IT(RMS) 8 A
Repetitive peak off-state voltage, VDRM /
VRRM 600 V to 800 V
Triggering gate current, IGT (Q1) 5 to 50 mA
Description
Available either in through-hole and surface-
mount packages, these devices are suitable for
general purpose AC switching. They can be used
as an ON/OFF function in applications such as
static relays, heating regulation, induction motor
starting circuits or for phase control operation in
light dimmers and motor speed controllers, etc.
The Snubberless versions (BTA, BTB08_xxxxW
and T8 series) are specially recommended for
use on inductive loads, thanks to their high
commutation performance.
Logic level versions are designed to interface
directly with low power drivers such as
Microcontrollers.
By using an internal ceramic pad, the BTA series
provide voltage insulated tab (rated at 2500 VRMS)
in compliance with UL standards (file ref.:
E81734).
April 2017
DocID7472 Rev 12
This is information on a product in full production.
1/18
www.st.com
Characteristics
BTA08, BTB08, T810, T835, T850
1 Characteristics
Symbol
Table 1: Absolute maximum ratings (Tj = 25 °C unless otherwise stated)
Parameter
Value
Unit
IT(RMS)
ITSM
I2t
dl/dt
IGM
PG(AV)
Tstg
Tj
RMS on-state current
(full sine wave)
IPAK, DPAK,
TO-220AB,
D²PAK
TO-220ABIns.
Non repetitive surge peak
on-state current
(full cycle, Tj initial = 25 °C)
I2t value for fusing
f = 50 Hz
f = 60 Hz
Critical rate of rise of on-state
current IG = 2 x IGT, tr ≤ 100 ns
f = 120 Hz
Peak gate current
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Tc = 110 °C
Tc = 100 °C
t = 20 ms
tp = 16.7 ms
tp = 10 ms
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
8A
80
A
84
36 A2s
50 A/µs
4
1
-40 to +150
-40 to +125
A
W
°C
°C
Table 2: Electrical characteristics (Tj = 25 °C, unless otherwise specified) Snubberless and
logic level (3 quadrants)
Symbol Parameter Quadrant
T8 BTA08/BTB08
Unit
10 35 50 TW SW CW BW
IGT(1)
VGT
VD = 12 V,
RL = 30 Ω
I - II - III Max. 10 35 50 5 10 35 50 mA
I - II - III Max.
1.2
V
VD = VDRM,
VGD RL = 3.3 kΩ, I - II - III Min.
Tj = 125 °C
0.2
V
IH(2) IT = 100 mA
Max. 15 35 50 10 15 35 50 mA
I - III Max. 25 50 70 10 25 50 70
IL IG = 1.2 x IGT
mA
II Max. 30 60 80 15 30 60 80
dV/dt
VD = 67% VDRM,
gate open, Tj = 125 °C
Max. 40 400 1000 20 40 400 1000 V/µs
(dV/dt)c = 0.1 V/µs,
Tj = 125 °C
Min. 5.4
3.5 5.4
(dl/dt)c
(dV/dt)c = 10 V/µs,
Tj = 125 °C
Min. 2.8
1.5 2.98
A/ms
Without snubber,
Tj = 125 °C
Min. 4.5 7
4.5 7
Notes:
(1)Minimum IGT is guaranteed at 5 % of IGT max.
(2)For both polarities of A2 referenced to A1
2/18 DocID7472 Rev 12
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