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PDF CQ220-8MFP Data sheet ( Hoja de datos )
| Número de pieza | CQ220-8MFP | |
| Descripción | 8.0 AMP TRIAC | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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CQ220-8MFP
CQ220-8NFP
CentralTM
Semiconductor Corp.
8.0 AMP TRIAC
600 THRU 800 VOLTS
FULL
PAK
TO-220FP CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ220-8MFP
series type is an Epoxy Molded Silicon Triac designed
for full wave AC control applications featuring gate
triggering in all four (4) quadrants.
FULL PAK:
• Fully insulated plastic case.
• Suitable for automatic insertion.
• No mica insulator required.
• Does not require non-conductive nylon hardware.
• Can be easily mounted with metal screw or rivet.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
CQ220 CQ220
-8MFP -8NFP
UNITS
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=90°C)
Peak One Cycle Surge (t=8.3ms)
I2t Value for Fusing (t=8.3ms)
VDRM
IT(RMS)
ITSM
I2t
600 800
8.0
50
10
V
A
A
A2s
Peak Gate Power (tp=10µs)
Average Gate Power Dissipation
Peak Gate Current (tp=10µs)
Peak Gate Voltage (tp=10µs)
Critical Rate of Rise of On-State Current
PGM
PG (AV)
IGM
VGM
40 W
1.0 W
4.0 A
16 V
Repetitive (f=60Hz)
di/dt
10 A/µs
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
Tstg
TJ
ΘJA
ΘJC
-40 to +150
-40 to +125
60
3.2
°C
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IDRM
IDRM
IGT
IGT
IH
VGT
VGT
VTM
dv/dt
Rated VDRM
Rated VDRM, TC=125°C
VD=12V, RL=10Ω, QUAD I, II, III
VD=12V, RL=10Ω, QUAD IV
IT=100mA
VD=12V, RL=10Ω, QUAD I, II, III
VD=12V, RL=10Ω, QUAD IV
ITM=11A, tp=380µs
VD=2/3 VDRM, RGK=∞, TC=125°C
5.0
TYP
4.5
17
4.7
0.95
1.35
1.30
MAX
10
500
20
50
25
1.50
2.50
1.75
UNITS
µA
µA
mA
mA
mA
V
V
V
V/µs
R1 (14-September 2004)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CQ220-8MFP.PDF ] | |
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