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PDF BTB04T Data sheet ( Hoja de datos )
| Número de pieza | BTB04T | |
| Descripción | Triacs | |
| Fabricantes | Inchange Semiconductor | |
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INCHANGE Semiconductor
isc Triacs
isc Product Specification
BTB04 T/D/S/A
FEATURES
·With TO-220AB non insulated package
·Suitables for general purpose applications where gate high sensitivity is
required. Application on 4Q such as phase control and static switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
IT(RMS)
ITSM
Tj
Tstg
Rth(j-c)
Rth(j-a)
RMS on-state current (full sine wave)Tj=95℃
Non-repetitive peak on-state current tp=10ms
Operating junction temperature
Storage temperature
Thermal resistance, junction to case
Thermal resistance, junction to ambient
MIN UNIT
4A
40 A
110 ℃
-45~150 ℃
3.2 ℃/W
60 ℃/W
SYMBOL
PARAMETER
VDRM
VRRM
Repetitive peak off-state voltage
Repetitive peak reverse voltage
400T/D/S/A 600T/D/S/A 700T/D/S/A UNIT
400 600 700 V
400 600 700 V
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
IDRM
IGT
Repetitive peak reverse current
Repetitive peak off-state current
VR=VRRM,
VR=VRRM, Tj=110℃
VD=VDRM,
VD=VDRM, Tj=110℃
Gate trigger current
Ⅰ-Ⅱ-Ⅲ
VD=12V; RL= 33Ω
T
5
Ⅳ5
IH Holding current
IGT= 0.1A, Gate Open 15
VGT Gate trigger voltage all quadrant VD=12V; RL= 30Ω
VTM On-state voltage
IT= 5A
MAX
0.01
0.5
0.01
0.5
DS
5 10
10 10
15 25
1.5
1.65
UNIT
mA
mA
A
10 mA
25
25 mA
V
V
isc website：www.iscsemi.cn
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