|
Renesas |
BCR16CS-16LB
Triac
Medium Power Use
Features
IT (RMS) : 16 A
VDRM : 800 V
IFGTI, IRGTI, IRGT III : 30 mA
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
123
Preliminary Datasheet
R07DS0226EJ0100
Rev.1.00
Dec 14, 2010
The product guaranteed maximum junction
temperature of 150°C
Non-Insulated Type
Planar Passivation Type
2, 4
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
4. T2 Terminal
Applications
Contactless AC switch, light dimmer, electronic flasher unit, hair drier, control of household equipment such as TV sets,
stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control,
solid state relay, copying machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Symbol
IT (RMS)
ITSM
I2t
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Symbol
VDRM
VDSM
Ratings
16
160
106.5
5
0.5
10
2
– 40 to +150
– 40 to +150
1.3
Voltage class
16
800
960
Unit
V
V
Unit
A
A
A2s
W
W
V
A
C
C
g
Conditions
Commercial frequency sine full wave
360° conduction Tc = 125CNote3
60Hzsinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
R07DS0226EJ0100 Rev.1.00
Dec 14, 2010
Page 1 of 7
BCR16CS-16LB
Preliminary
Electrical Characteristics
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Repetitive peak off-state current
IDRM
—
— 2.0 mA Tj = 150C, VDRM applied
On-state voltage
VTM — — 1.5 V Tc = 25C, ITM = 25 A,
Instantaneous measurement
Gate trigger voltageNote2 VFGT — — 1.5 V Tj = 25C, VD = 6 V, RL = 6 ,
VRGT — — 1.5 V RG = 330
VRGT
—
—
1.5
V
Gate trigger currentNote2
IFGT
— — 30 mA Tj = 25C, VD = 6 V, RL = 6 ,
IRGT — — 30 mA RG = 330
IRGT — — 30 mA
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltageNote5
VGD
Rth (j-c)
(dv/dt)c
0.2/0.1
—
10/1
—
—
—
— V Tj = 125C/150C, VD = 1/2 VDRM
1.4 C/W Junction to caseNote3 Note4
— V/s Tj = 125C/150C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T2 tab.
4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = – 8.0 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS0226EJ0100 Rev.1.00
Dec 14, 2010
Page 2 of 7
|