파트넘버.co.kr BD436 데이터시트 PDF


BD436 반도체 회로 부품 판매점

EPITAXIAL SILICON POWER TRANSISTORS



CDIL 로고
CDIL
BD436 데이터시트, 핀배열, 회로
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
EPITAXIAL SILICON POWER TRANSISTORS
ECB
BD433
BD435
BD437
BD439
BD441
NPN
BD434
BD436
BD438
BD440
BD442
PNP
TO126
Plastic Package
Intended for use in Medium Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
Collector Base Voltage
VCBO
Collector Emitter Voltage
VCES
Collector Emitter Voltage
VCEO
Emitter Base Voltage
VEBO
Collector Current
IC
Collector Peak Current (t=10ms_ ICM
Base Current
IB
Total Dissipation @ TC=25ºC
PD
Total Dissipation @ Ta=25ºC
Derate above 25ºC
PD
Operating and Storage
Junction Temperature Range
Tj, Tstg
BD433
BD434
22
22
22
BD435
BD436
32
32
32
BD437
BD438
45
45
45
5.0
4.0
7.0
1.0
36.0
1.25
10
BD439
BD440
60
60
60
- 65 to 150
BD441
BD442
80
80
80
UNIT
V
V
V
V
A
A
A
W
W
mW/ ºC
ºC
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
Rth (j-c)
Rth (j-a)
3.5
100
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION BD433 BD435 BD437 BD439 BD441
Collector Cut off Current
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Sustaining
Voltage
BD434 BD436 BD438 BD440 BD442
ICBO VCB=Rated VCBO, IE=0 <100 <100 <100 <100 <100
ICES VBE=0, VCE=Rated VCES <100 <100 <100 <100 <100
IEBO
VEB=5V, IC=0
<1.0 <1.0 <1.0 <1.0 <1.0
*VCEO (sus)
IC=100mA, IB=0
>22 >32 >45 >60 >80
Collector Emitter Saturation
Voltage
*VCE (sat)
IC=2.0A, IB=0.2A
<0.5 <0.5 <0.6 <0.8 <0.8
Base Emitter On Voltage
*VBE (on) IC=10mA, VCE=5V ALL
typ 0.58
IC=2.0A, VCE=1V
<1.1 <1.1 <1.2 <1.5
<1.5
UNIT
µA
µA
mA
V
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 4


BD436 데이터시트, 핀배열, 회로
EPITAXIAL SILICON POWER TRANSISTORS
ECB
BD433
BD435
BD437
BD439
BD441
NPN
BD434
BD436
BD438
BD440
BD442
PNP
TO126
Plastic Package
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION BD433 BD435 BD437 BD439 BD441
DC Current Gain
BD434 BD436 BD438 BD440 BD442
*hFE
IC=10mA, VCE=5V
>40 >40 >30 >20 >15
IC=500mA, VCE=1V >85 >85 >85 >40 >40
IC=2.0A, VCE=1V
>50 >50 >40 >25 >15
*hFE1 / hFE2
Current Gain Bandwidth
Product
Matched IC=500mA, VCE=1V ALL
Pairs
fT IC=250mA, VCE=1V ALL
<1.4
>3.0
*Pulsed Pulse Duration=300µs, Duty Cycle=1.5%
UNIT
MHz
Continental Device India Limited
Data Sheet
Page 2 of 4




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BD436 transistor

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