파트넘버.co.kr BC337-25 데이터시트 PDF


BC337-25 반도체 회로 부품 판매점

NPN Transistor



Taiwan Semiconductor 로고
Taiwan Semiconductor
BC337-25 데이터시트, 핀배열, 회로
Small Signal Product
BC337-16/25/40 thru BC338-16/25/40
Taiwan Semiconductor
NPN Transistor
FEATURES
- For switching and AF amplifier applications
- These types are subdivided into three groups -16, -25 and -40, according to their current gain
- Moisture sensitivity level 1
- Driver transistor
- Pb free and RoHS complian
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
- Case: TO-92 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 190 mg (approximately)
TO-92
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Total Power dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Junction and Storage Temperature Range
BC337
BC338
BC337
BC338
BC337
BC338
PTOT
VCBO
VCEO
VEBO
IC
ICM
TJ , TSTG
625
50
30
45
25
5
5
800
1000
-55 to +150
PARAMETER
Collector-Base Breakdown Voltage
BC337
BC338
IC= 100μA
Collector-Emitter Breakdown Voltage BC337
BC338
IC= 2mA
Emitter-Base Breakdown Voltage
BC337
BC338
IE= 100μA
Collector Base Cutoff Current
Collector Emitter Saturation Voltage
Base Emitter On Voltage
BC337
BC338
VCB=50V
VCB=30V
IC=500mA, IB=50mA
VCE=1V, IC=300mA
Transition Frequency
VCE=5V, IC=10mA,
f=50MHz
Output Capacitance
DC Current Gain
VCB=10V, f=1MHz
Current Gain Group: -16
-25
-40
VCE= 5V,
IC= 100mA
VCE= 5V,
IC= 300mA
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
VCE(sat)
VBE(on)
fT
Cob
hFE
MIN
50
30
45
25
5
5
-
-
-
-
100
12
100
160
250
60
MAX
-
-
-
100
100
0.7
1.2
-
-
250
400
630
-
UNIT
mW
V
V
V
mA
mA
°C
UNIT
V
V
V
nA
V
V
MHz
pF
V
Document Number: DS_S1407004
Version: B14


BC337-25 데이터시트, 핀배열, 회로
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
FIG.1 STATIC CHARACTERSTIC
1000
10 9
800 8 7
6
600 5
400
200
COMMON EMITTER
Ta=25
4
3
2
IB=1mA
0
0
0 10 20 30
VCE(V), COLLECTOR EMITTER VOLTAGE
40
0
0.2
0.4
0.6
0.8
1
0.8
FIG.3 STATIC CHARACTERSTIC
COMMON EMITTER
Ta=25
VCE=1V
0.6 0.4 0.2
BASE CURRENT IB(mA)
0
1200
1000
800
600
400
200
0
0
FIG.5 IC - VCE(LOW VOLTAGE REGION)
76
COMMON EMITTER
VCE=1V
8
IB=1mA
12345
VCE(V), COLLECTOR EMITTER VOLTAGE
5
4
3
2
0
6
BC337-16/25/40 thru BC338-16/25/40
Taiwan Semiconductor
1000
800
600
400
200
0
0.8
FIG.2 STATIC CHARACTERSTIC
COMMON EMITTER
Ta=25
VCE=1V
0.6 0.4 0.2
BASE CURRENT IB(mA)
0
1000
100
FIG. 4 hFE - IC
Ta= 100
COMMON EMITTER
VCE=1V
Ta= 25
10
1
Ta= -25
10 100
Ic(mA), COLLECTOR CURRENT
1000
FIG. 6 VCE(sat) - IC
1
COMMON EMITTER
IC / IB = 25
Ta= -25
Ta= 100
0.1 Ta= 25
Ta= 100
0.01
1
10 100
Ic(mA), COLLECTOR CURRENT
1000
Document Number: DS_S1407004
Version: B14




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BC337-25 transistor

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