(PDF) RCR1525SI Datasheet - P-Channel Enhancement Mode Field Effect Transistor

Número de pieza	RCR1525SI
Descripción	P-Channel Enhancement Mode Field Effect Transistor
Fabricantes	RCR
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No Preview Available ! RCR1525SI P-Channel Enhancement Mode Field Effect Transistor z Features VDS (V) = -30 V ID = -3.5 A RDS(ON) = 75mΩ @VGS = -10V RDS(ON) = 90mΩ @VGS = -4.5V High density cell design for low RDS(ON). z General Description This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. z Pin Configuration z Package Information D 3 12 GS z Absolute Maximum Ratings @TA = 25℃ unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed(1) Power Dissipation Operating and Storage Temperature Range Symbol VDSS VGSS ID PD TJ,TSTG Ratings -30 ±20 -3.5 -16 1 -55 to 150 Unit V V A W ℃ YKKJPD-V3.1 1/4 1 page

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PDF RCR1525SI Data sheet ( Hoja de datos )