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NPN SILICON PLANAR EPITAXIAL TRANSISTORS



CDIL 로고
CDIL
BC848A 데이터시트, 핀배열, 회로
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
P IN CONFIGURATION (NPN)
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
BC846, BC847, BC848
SOT-23
Formed SMD Package
For Lead Free Parts, Device Part #
will be Prefixed with "T"
2
Marking
BC846 =1D
BC846A=1A
BC846B=1B
BC847 =1H
BC847A=1E
BC847B=1F
BC847C=1G
BC848 =1M
BC848A=1J
BC848B=1K
BC848C=1L
For use in Driver Stages of Audio Amplifier in Thick and Thin-film Hybrid Circuits
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
BC846
Collector Base Voltage
VCBO
80
Collector Emitter Voltage (VBE=0V)
VCES
80
Collector Emitter Voltage
VCEO
65
Emitter Base Voltage
VEBO
6
Collector Current (DC)
IC
Collector Current - Peak
ICM
Emitter Current - Peak
- IEM
Base Current - Peak
IBM
Power Dissipation upto Tamb=25ºC
Storage Temperature
Ptot*
Tstg
Junction Temperature
Tj
BC847
50
BC848
30
50 30
45 30
65
100
200
200
200
250
- 55 to +150
150
THERMAL RESISTANCE
From junction to ambient
Rth(j-a) *
500
**Mounted on a ceramic substrate of 8mm x 10 mm x 0.7mm
UNITS
V
V
V
V
mA
mA
mA
mW
ºC
ºC
K/W
BC846_848Rev_2 170407E
Continental Device India Limited
Data Sheet
Page 1 of 5


BC848A 데이터시트, 핀배열, 회로
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
P IN CONFIGURATION (NPN)
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
BC846, BC847, BC848
SOT-23
Formed SMD Package
For Lead Free Parts, Device Part #
will be Prefixed with "T"
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Cut off Current
ICBO
VCB=30V, IE=0
VCB=30V, IE=0, Tj=150 ºC
Base Emitter on Voltage
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
VBE(on) *
VCE(Sat)
VBE(Sat)***
hFE
IC=2mA, VCE=5V
IC=10mA, VCE=5V
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10µA, VCE=5V
BC846A/BC847A/BC848A
BC846B/BC847B/BC848B
BC847C/BC848C
MIN TYP MAX UNITS
15 nA
5 µA
0.58 0.70 V
0.77
0.25 V
0.60
0.7 V
0.9
90
150
270
Collector Capacitance
Transition Frequency
Noise Figure
IC=2mA, VCE=5V
BC846
110 450
BC847/BC848 110 800
BC846A/BC847A/BC848A 110
220
BC846B/BC847B/BC848B 200
450
BC847C/BC848C
420
800
Cc IE=ie=0, VCB=10V, f=1MHz
2.5
pF
fT IC=10mA, VCE=5V,f=100MHz 100
NF IC=0.2mA, VCE=5V
MHz
10 dB
Rs=2k, f=1KHz, B=200Hz
*VBE (on) decreases by about 2mV/K with increasing temperature.
***VBE(sat) decreases by about 1.7mV/K with increasing temperature.
BC846_848Rev_2 170407E
Continental Device India Limited
Data Sheet
Page 2 of 5




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