파트넘버.co.kr BC807-16 데이터시트 PDF


BC807-16 반도체 회로 부품 판매점

PNP Plastic-Encasulate Transistor



Taiwan Semiconductor 로고
Taiwan Semiconductor
BC807-16 데이터시트, 핀배열, 회로
Small Signal Product
Features
Ideally suited for automatic insertion
Epitaxial planar die construction
For switching, AF driver and amplifer applications
Complementary NPN type available (BC817)
BC807-16/-25/-40
0.3 Watts, PNP Plastic-Encasulate Transistor
SOT-23
Mechanical Data
Case : SOT- 23, Molded plastic
Case material : Molded plastic, UL flammability
classification rating 94V-0
Moisture sensitivity : Level 1 per J-STD-020C
Terminals : Solderable per MIL-STD-202, method 208
Lead free plating
Marking : -16: 5A, -25: 5B, -40: 5C
Weight : 0.008grams (approximately)
Ordering Information (example)
Part No.
Package
Packing Packing code
BC807-16
SOT-23
3K / 7 " Reel
RF
Note : Detail please see "Ordering Information(detail, example)" below.
Packing code
(Green)
RFG
Manufacture code
B0
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Current - Continuous
IC = -10 μA
IC = -10 mA
Power Dissipation
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency VCE = -5 V
Junction Temperature
IE = -1 μA
VCB = -45 V
VCB = -40 V
VEB = -4 V
IC = -500 mA
IC = -500 mA
IC = -10 mA
Storage Temperature Range
IE = 0
IB = 0
IC = 0
IE = 0
IB = 0
IC = 0
IB = 50 mA
IB = 50 mA
f = 100 MHz
Symbol
VCBO
VCEO
IC
PD
VEBO
ICBO
ICEO
IEBO
VCE(sat)
VBE(sat)
fT
TJ
TSTG
DC Current Gain
Parameter
807-16
807-25
VCE = -1 V
807-40
IC = -100 mA
Symbol
hFE(1)
BC807-16
BC807-25
-50
-45
-0.5
0.3
-5
-0.1
-0.2
-0.1
-0.7
-1.2
100
150
-55 to +150
BC807-40
Units
V
V
A
W
V
μA
μA
μA
V
V
MHz
°C
°C
Min Max Units
100 250
160 400
250 600
Version : E13


BC807-16 데이터시트, 핀배열, 회로
Small Signal Product
400
300
200
100
0
0
RATINGS AND CHARACTERISTIC CURVES
Fig. 1 Power Derating Curve
See Note 1
1000
Fig. 2 Gain Bandwidth Product VS. Collector Current
TA = 25 oC
f = 20 MHz
-VCE = 5.0 V
100
-VCE = 1 V
50 100 150
TSB, Substrate Temperature (oC)
200
10
1
10 100
IC, Collector Current (mA)
1000
1000
Fig.3 Collector Sat Voltage VS. Collector Current
- 50 oC
100 25 oC
10
150 oC
Typical
- - - - - - - - Limits
at TA = 25 oC
-IC / -IB = 10
1
0.1
0
0.1 0.2 0.3 0.4
-VCESAT , Collector Saturation Voltage (V)
0.5
Fig.5 Typical Emitter-Collector Characterisitcs
500
3.2
1.4
400
2.8 2.4
2.0
1.8
300
200
100
0
0
1.6
1.0 1.2
0.8
0.6
0.4
- IB = 0.2 mA
1
-VCE , Collector-Emitter Voltage (V)
2
1000
Fig. 4 DC Current Gain VS. Collector Current
150 oC
-VCE = 1V
25 oC
100
- 50 oC
10
0.1
1 10 100
-IC , Collector Current (mA)
1000
100
80
60
40
20
0
0
Fig. 6 Typical Emitter-Collector Characteristics
0.4
0.35
0.3
0.25
0.2
0.15
0.1
- IB = 0.05 mA
10
-VCE , Collector-Emitter Voltage (V)
20
Version : E13




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BC807-16 transistor

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