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PDF BCX5316Q Data sheet ( Hoja de datos )

Número de pieza BCX5316Q
Descripción PNP MEDIUM POWER TRANSISTOR
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BCX5316Q
80V PNP MEDIUM POWER TRANSISTOR IN SOT89
Description
This Bipolar Junction Transistor (BJT) is designed to meet the
stringent requirements of automotive applications.
Features
BVCEO > -45V, -60V & -80V
IC = -1A Continuous Collector Current
ICM = -2A Peak Pulse Current
Low Saturation Voltage VCE(SAT) < -500mV @ -0.5A
Complementary NPN Types: BCX5616Q
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT89
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Finish Leads.
Solderable per MIL-STD-202 Method 208 e3
Weight: 0.055 grams (Approximate)
Applications
Automotive
Medium Power Switching or Amplification Applications
AF Driver and Output Stages
SOT89
Top View
C
B
E
Device Symbol
E
CC
B
Top View
Pin-Out
Ordering Information (Notes 4 & 5)
Product
BCX5316QTA
Compliance
Automotive
Marking
AL
Reel Size (inches)
7
Tape Width (mm)
12
Quantity per Reel
1,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT89
AL
AL = Product Type Marking Code
BCX5316Q
Datasheet Number: DS37033 Rev. 2 - 2
1 of 7
www.diodes.com
May 2015
© Diodes Incorporated

1 page




BCX5316Q pdf
1.0
0.8
TA = -55°C
0.6 TA = 25°C
0.4 TA = 85°C
TA = 150°C
0.2
VCE = -2V
0
0.001
0.01
0.1
1
-IC, COLLECTOR CURRENT(A)
Fig 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
10
1.2
1.0
BCX5316Q
0.5
0.4
0.3
TA = 150°C
0.2 TA = 85°C
0.1 TA = 25°C
TA = -55°C
0
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
300
250
0.8
TA = -55°C
0.6 TA = 25°C
TA = 85°C
0.4
TA = 150°C
0.2
IC / IB = 10
0
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
160
140
f = 1MHz
120
100
80
Cibo
60
40
20
Cobo
0
0 10 20 30 40
VR, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
200
150
100
50
VCE = -5V
f = 100MHz
0
0 20 40 60 80 100
-IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Gain-Bandwidth Product vs. Collector Current
BCX5316Q
Datasheet Number: DS37033 Rev. 2 - 2
5 of 7
www.diodes.com
May 2015
© Diodes Incorporated

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