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SeCoS |
Elektronische Bauelemente
BCW68
PNP Plastic-Encapsulate Transistors
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
Complementary to BCW66.
MARKING:
BCW68F:DF
BCW68G:DG
BCW68H:DH
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction & Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
RATINGS
-60
-45
-5
-0.8
0.33
150, -55~150
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
- 0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15
UNIT
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITIONS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
Input Capacitance
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
BCW68F
hFE1 BCW68G
BCW68H
BCW68F
hFE2 BCW68G
BCW68H
BCW68F
hFE3 BCW68G
BCW68H
BCW68F
hFE4 BCW68G
BCW68H
VCE(sat)
VBE(sat)
fT
COB
CIB
-60
-45
-5
35
50
80
75
120
180
100
160
250
35
60
100
-0.02
-0.02
V IC=-10μA, IE=0
V IC=-10mA, IB=0
V IE=-10μA, IC=0
μA VCB=-45V, IE=0
μA VEB=-4V, IC=0
VCE=-10V, IC=-0.1mA
VCE=-1V, IC=-10mA
250
400 VCE=-1V, IC=-100mA
630
VCE=-2V, IC=-500mA
-0.3 V IC=-100mA, IB=-10mA
-0.7 V IC=-500mA, IB=-50mA
-1.25
V IC=-100mA, IB=-10mA
-2 V IC=-500mA, IB=-50mA
200 MHz VCE=-5V, IC=-50mA,f=20MHz
6 pF VCB=-10V, IE=0,f=1MHz
60 pF VEB=-0.5V,IE=0,f=1MHz
27-Oct-2009 Rev. A
Page 1 of 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
BCW68
PNP Plastic-Encapsulate Transistors
27-Oct-2009 Rev. A
Page 2 of 3
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