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BCW68H 반도체 회로 부품 판매점

GENERAL PURPOSE TRANSISTOR



CDIL 로고
CDIL
BCW68H 데이터시트, 핀배열, 회로
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW67, A, B, C
BCW68, F, G, H
GENERAL PURPOSE TRANSISTOR
P–N–P transistor
Marking
BCW67A = DA
BCW67B = DB
BCW67C = DC
BCW68F = DF
BCW68G = DG
BCW68H = DH
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation at Tamb = 25°C
D.C. current gain
IC = 10 mA; VCE = 1 V
BCW67A, 68F
BCW67B, 68G
BCW67C, 68H
IC = 100 mA; VCE = 1 V
BCW67A, 68F
BCW67B, 68G
–VCBO
–VCEO
–VEBO
–IC
Ptot
hFE
hFE
hFE
hFE
hFE
BCW 67series 68 series
max. 45
60 V
max. 32
45 V
max.
5V
max.
800 mA
max
225 mW
min.
min.
min.
min.
max.
min.
max.
75
120
180
100
250
160
400
Continental Device India Limited
Data Sheet
Page 1 of 3


BCW68H 데이터시트, 핀배열, 회로
BCW67, A, B, C
BCW68, F, G, H
BCW67C, 68H
IC = 300 mA; VCE = 1 V
BCW67A, 68F
BCW67B, 68G
BCW67C, 68H
hFE
min.
max.
hFE min.
hFE min.
hFE min.
250
630
35
60
100
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
–VCBO
Collector–emitter voltage (open base)
–VCEO
Emitter–base voltage (open collector)
–VEBO
Collector current (d.c.)
–IC
Total power dissipation at Tamb = 25°C Ptot
Storage temperature
Tstg
max.
max.
max.
max.
max
45 60
32 45
5
800
225
–55 to +150
V
V
V
mA
mW
°C
THERMAL CHARACTERISTICS
Tj = P (Rth j–t + Rth s–a) + Tamb
Thermal resistance
from junction to ambient
Rth j–a 556 556 556
°C/mW
CHARACTERISTICS (at TA = 25°C unless otherwise specified)
Collector–emitter breakdown voltage
BCW67 series
68 series
IC = 10 mA; IB = 0
IC = 10 mA; VEB = 0
Emitter–base breakdown voltage
V(BR)CEO min. 32
V(BR)CES min. 45
45 V
60 V
IE = 10 mA; IC = 0
Collector cut–off current
V(BR)EBO min.
5V
VCE = 32 V; IE = 0 V
VCE = 45 V; IE = 0 V
VCE = 32 V; IE = 0 V; TA = 150°C
VCE = 45 V; IE = 0 V; TA = 150°C
Emitter cut–off current
ICES
ICES
ICES
ICES
max.
max.
max.
max.
20
10
– nA
20 nA
mA
10 mA
VEB = 4 V; IC =0
Output capacitance at f = 1 MHz
IEBO
max.
20 nA
IE = 0; VCB = 10 V
Input capacitance at f = 1 MHz
Cc max.
18 pF
IC = 0; VEB = 0.5 V
Ce max.
105 pF
Saturation voltages
IC = 300 mA; IB = 30 mA
IC = 500 mA; IB = 50 mA
Noise figure at RS = 1 kW
IC = 0.2 mA; VCE = 5 V
f = 1 KHz, BW = 200 Hz
Transition frequency at f = 100 MHz
IC = 20 mA; VCE = 10 V
VCEsat max.
–VBEsat max.
NF max.
fT min.
1.5 V
2V
10 dB
100 MHz
Continental Device India Limited
Data Sheet
Page 2 of 3




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