BCW68 반도체 회로 부품 판매점
EPITAXIAL PLANAR PNP TRANSISTOR
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 KEC |
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
BCW68
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
IE
PC *
Tj
Tstg
-60
-45
-5
-800
800
350
150
-55 150
* : Package Mounted On 99.9% Alumina 10 8 0.6mm.
UNIT
V
V
V
mA
mA
mW
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
MARK SPEC
TYPE
BCW68F
BCW68G
MARK
DF
DG
Marking
hFE Rank
Type Name
Lot No.
1998. 6. 15
Revision No : 1
1/2
BCW68
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V(BR)CEO
V(BR)EBO
Collector Cut-off Current
ICES
Emitter Cut-off Current
DC Current Gain
Group F
Group G
Group F
Group G
Group F
Group G
IEBO
hFE
Base-Emitter Saturation Voltage
VBE(sat)
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Collector Input Capacitance
Noise Figure
VCE(sat)
fT
Cob
Cib
NF
TEST CONDITION
IC=-10mA, IB=0
IE=10 A, IC=0
VEB=0V, VCE=-45V
Ta=150 , VEB=0V, VCE=-45V
IC=0, VEB=-4V
VCE=-1V, IC=-10mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-500mA
IC=-100mA, IB=-10mA
IC=-500mA, IB=-50mA
IC=-100mA, IB=-10mA
IC=-500mA, IB=-50mA
IC=-80mA, VCE=-10V, f=100MHz
VCB=-10V, IE=0, f=1MHz
VEB=-0.5V, f=1MHz
IC=-0.2mA, VCE=-5V,
Rg=1k , f=1kHz
MIN.
-45
-5.0
-
-
-
75
120
100
160
35
60
-
-
-
-
100
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-20
-20
-20
-
-
250
400
-
-
-1.25
-2.0
-0.3
-0.7
-
18
80
UNIT
V
V
nA
A
nA
V
V
MHz
pF
pF
- 2.0 10 dB
1998. 6. 15
Revision No : 1
2/2
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( kec )
BCW68 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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전력반도체 문의 : 010-3582-2743
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