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Kexin |
SMD Type
Transistors
PNP Transistor
KC856A,B/KC857A,B,C/KC858A,B,C
(BC856A,B/BC857A,B,C/BC858A,B,C)
Features
Ideally suited for automatic insertion
For Switching and AF Amplifier Applications
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
KC856
KC857
KC858
KC856
KC857
KC858
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Rating
-80
-50
-30
-65
-45
-30
-5
-0.1
200
150
-65 to +150
Unit
V
V
V
A
mW
1.Base
2.Emitter
3.collector
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SMD Type
Transistors
KC856A,B/KC857A,B,C/KC858A,B,C
(BC856A,B/BC857A,B,C/BC858A,B,C)
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
KC856
KC857
Symbol
Testconditons
VCBO Ic= -10ìA, IE=0
Min Typ Max Unit
-80
-50 V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector capacitance
KC858
KC856
KC857
VCEO Ic= -10 mA, IB=0
KC858
VEBO IE= -10ìA, IC=0
KC856
VCB= -70 V , IE=0
KC857
ICBO VCB= -45 V , IE=0
KC858
VCB= -25 V , IE=0
KC856
VCE= -60 V , IB=0
KC857
ICEO VCE= -40 V , IB=0
KC858
VCE= -25 V , IB=0
IEBO VEB= -5 V , IC=0
KC856A, 857A,858A
KC856B, 857B,858B hFE VCE= -5V, IC= -2mA
KC857C,KC858C
VCE(sat) IC=-100mA, IB= -5 mA
VBE(sat) IC= -100 mA, IB= -5mA
Cob VCB=-10V,f=1MHz
-30
-65
-45
-30
-5
120
220
420
V
V
-0.1 A
-0.1 A
-0.1 A
250
475
800
-0.5 V
-1.1 V
4.5 pF
Transition frequency
fT
VCE= -5 V, IC= -
10mA,f=100MHz
100
MHz
Marking
NO.
Marking
NO.
Marking
NO.
Marking
KC856A
3A
KC857A
3E
KC858A
3J
KC856B
3B
KC857B
3F
KC858B
3K
KC857C
3G
KC858C
3L
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