파트넘버.co.kr BC846B 데이터시트 PDF


BC846B 반도체 회로 부품 판매점

General Purpose Transistor NPN



SeCoS 로고
SeCoS
BC846B 데이터시트, 핀배열, 회로
Elektronische Bauelemente
BC846A, B
BC847A, B, C
BC848A, B, C
A suffix of "-C" specifies halogen & lead-free
FEATURES
n General Purpose Transistor NPN Type
n Collect current : 0.1A
n Operating Temp. : -55OC ~ +150OC
n RoHS compliant product
C OLLE C TOR
3
1
B AS E
2
E MITTE R
3
1
2
A
L
3
Top View
12
VG
BS
C
D HK
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
J
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ELECTRICAL CHARACTERISTICS˄Tamb=25ć unless otherwise specified˅
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BC846
BC847
BC848
BC846
BC847
BC848
VCBO Ic= 10 ­Aˈ IE=0
VCEO Ic= 10 mAˈ IB=0
80
50
30
65
45
30
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
BC846
BC847
BC848
BC846
BC847
BC848
VEBO
ICBO
ICEO
IE= 10 ­Aˈ IC=0
VCB= 70 V ,
VCB= 50 V ,
VCB= 30 V ,
VCE= 60 V ,
VCE= 45 V ,
VCE= 30 V ,
IE=0
IE=0
IE=0
IB=0
IB=0
IB=0
6
Emitter cut-off current
IEBO VEB= 5 V , IC=0
DC current gain
BC846A,847A,848A
BC846B,847B,848B
BC847C,BC848C
HFE˄1˅
VCE= 5V, IC= 2mA
110
200
420
Collector-emitter saturation voltage
VCE(sat) IC=100mA, IB= 5 mA
MAX UNIT
V
V
V
0.1 ­A
0.1 ­A
0.1 ­A
220
450
800
0.5 V
Base-emitter saturation voltage
VBE(sat) IC= 100 mA, IB= 5mA
1.1
Transition frequency
VCE= 5 V, IC= 10mA
fT 100
f=100MHz
DEVICE MARKING
BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K; BC848C=1L
V
MHz
http://www.SeCoSGmbH.com
01-Jun-2004 Rev.B
Any changing of specification will not be informed individual
Page 1 of 3


BC846B 데이터시트, 핀배열, 회로
Elektronische Bauelemente
BC846A, B
BC847A, B, C
BC848A, B, C
Typical Characteristics
BC846A/B, BC847A/B, BC848A/B
2.0
1.5
VCE = 10 V
TA = 25°C
1.0
0.8
0.6
0.4
0.3
0.2
0.2
0.5 1.0 2.0 5.0 10 20
50 100
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
200
1.0
0.9 TA = 25°C
0.8 VBE(sat) @ IC/IB = 10
0.7
0.6 VBE(on) @ VCE = 10 V
0.5
0.4
0.3
0.2
0.1 VCE(sat) @ IC/IB = 10
0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC = IC = IC = 50 mA
IC = 100 mA
10 mA 20 mA
0.8
0.4
0
0.02
0.1 1.0
IB, BASE CURRENT (mA)
10
Figure 3. Collector Saturation Region
20
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.2 1.0 10 100
IC, COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
10
7.0 TA = 25°C
5.0 Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
20
40
400
300
200
100
80
VCE = 10 V
TA = 25°C
60
40
30
20
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10 20
IC, COLLECTOR CURRENT (mAdc)
30
50
Figure 6. Current–Gain – Bandwidth Product
http://www.SeCoSGmbH.com
01-Jun-2004 Rev.B
Any changing of specification will not be informed individual
Page 2 of 3




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