파트넘버.co.kr BC847BW 데이터시트 PDF


BC847BW 반도체 회로 부품 판매점

NPN General Purpose Transistors



MCC 로고
MCC
BC847BW 데이터시트, 핀배열, 회로
MCC
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
BC846AW/BW
BC847AW/BW/CW
BC848AW/BW/CW
Features
Low current (max. 100mA)
Low voltage (max. 65V)
Case Material:Molded Plastic. UL Flammability Classification
Rating 94V-0 and MSL Rating 1
Maximum Ratings
Operating temperature : -65к to +150к
Storage temperature : -65к to +150к
Thermal resistance from junction to ambient*: 625K/W
Marking: BC846AW---1A ; BC846BW---1B
BC847AW---1E ; BC847BW---1F ; BC847CW---1G
BC848AW---1JS/1J ; BC848BW---1KS/1K ; BC848CW---1LS/1L
Electrical Characteristics @ 25к Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=10uAdc, IE=0)
BC846AW/BW
BC847AW/BW/CW
BC848AW/BW/CW
---
---
---
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0)
BC846AW/BW
BC847AW/BW/CW
BC848AW/BW/CW
---
---
---
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=1µAdc, IC=0)
BC846AW/BW, BC847AW/BW/CW
BC848AW/BW/CW
---
---
IC Collector Current (DC)
ICM Peak Collector Current
IBM Peak Base Current
---
---
---
* Transistor mounted on an FR4 printed-circuit board
Vdc
80
50
30
Vdc
65
45
30
Vdc
6
5
100 mAdc
200 mAdc
200 mAdc
NPN
General Purpose
Transistors
SOT-323
A
D
C
FE
BC
BE
G HJ
K
DIMENSIONS
INCHES
MM
DIM MIN
MAX MIN MAX
A
.071
.087
1.80
2.20
B
.045
.053
1.15
1.35
C
.079
.087
2.00
2.20
D
.026 Nominal
0.65Nominal
E
.047
.055
1.20
1.40
F
.012
.016
.30
.40
G .000
.004
.000
.100
H
.035
.039
.90
1.00
J
.004
.010
.100
.250
K
.012
.016
.30
.40
Suggested Solder
Pad Layout
0.70
NOTE
0.90
1.90
0.65
0.65
Revision: 6
www.mccsemi.com
1 of 5
2008/01/01


BC847BW 데이터시트, 핀배열, 회로
ON CHARACTERISTICS
Symbol
Parameter
ICBO Collector-base Cut-off Current
(ICE=0, VCB=30Vdc)
(ICE=0, VCB=30Vdc, Tj=150к)
ICEO
VCE(sat)
VBE(sat)
hFE
Emitter-base Cut-off Current
(IC=0, VEB=5Vdc)
Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=0.5mAdc)
(IC=100mAdc, IB=5mAdc*)
Base-Emitter Saturation Voltage
(IC=10mAdc,IB=0.5mAdc)
(IC=100mAdc, IB=5mAdc*)
DC Current Gain (IC=10µA; VCE=5V)
BC846AW; BC847AW;BC848AW
BC846BW; BC847BW;BC848BW
BC847CW;BC848CW
DC Current Gain (IC=2mA; VCE=5V)
BC846AW; BC847AW;BC848AW
BC846BW; BC847BW;BC848BW
BC847CW;BC848CW
VBE Base-emitter Voltage
(IC=2mAdc,VCE=5V)
(IC=10mAdc,VCE=5V)
Cc Collector Capacitance (VCB=10V; IE=Ie=0; f=1MHz)
fT Transition Frequency (VCE=5V; IC=10mA; f=100MHz)
F Noise Figure (VCE=5V; IC=200µA; f=1KHz; B=200Hz; RS=2K¡)
* Pulse test: tP̰300µs; ¥̰0.02
Min
---
---
---
---
---
---
---
---
---
---
110
200
420
580
---
---
100
---
MCC
TM
Micro Commercial Components
Typ
---
---
---
90
200
700
900
90
150
270
Max
15
5
100
250
600
---
---
---
---
---
Units
nA
µA
nA
mVdc
mVdc
mVdc
mVdc
180 220
290 450
520 800
660 700 mVdc
--- 770 mVdc
--- 4.5
pF
--- --- MHz
--- 10
dB
Revision: 6
www.mccsemi.com
2 of 5
2008/01/01




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BC847BW transistor

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