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Kexin |
SMD Type
TransistIoCrs
NPN General Purpose Transistor
BC846W,BC847W,BC848W
Features
Low current (max. 100 mA).
Low voltage (max. 65 V).
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Peak base current
Total power dissipation
Junction temperature
Storage temperature
Operating ambient temperature
Thermal resistance from junction to ambient
1 Emitter
2 Base
3 Collector
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tj
Tstg
Ramb
Rth j-a
BC846W BC847W BC848W
80 50 30
65 45 30
665
100
200
200
200
150
-65 to +150
-65 to +150
625
Unit
V
V
V
mA
mA
mA
mW
K/W
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SMD Type
TransistIoCrs
BC846W,BC847W,BC848W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
BC846W
DC current gain
BC847W,BC848W
BC846AW,BC847AW
BC846BW,BC847BW
BC847CW
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collector capacitance
Transition frequency
Noise figure
* Pulse test: tp 300µs, ä 0.02.
Symbol
Testconditons
Min Typ Max Unit
ICBO VCB = 30 V; IE = 0
15 nA
ICBO VCB = 30 V; IE = 0;Tj = 150
5 ìA
IEBO VEB = 5 V; IC = 0
100 nA
110 450
110 800
hFE IC = 2 mA; VCE = 5 V
110 180 220
200 290 450
420 520 800
IC = 10 mA; IB = 0.5 mA
VCE(sat)
IC = 100 mA; IB = 5 mA; *
90 250 mV
200 600 mV
IC = 10 mA; IB = 0.5 mA
VBE(sat)
IC = 100 mA; IB = 5 mA;*
700 mV
900 mV
IC = 2 mA; VCE = 5 V
VBE
IC = 10 mA; VCE = 5 V
580 660 700 mV
770 mV
CC VCB = 10 V; IE = Ie = 0;f = 1 MHz
3 pF
fT VCE = 5 V; IC = 10 mA;f = 100 MHz 100
MHz
NF
IC = 200 ìA; VCE = 5 V;RS = 2 kÙ; f =
1 kHz;B = 200 Hz
10 dB
hFE Classification
TYPE
Marking
BC846W
1D
TYPE
Marking
BC847W
1H
TYPE
Marking
BC848W
1M
BC846AW
1A
BC846BW
1B
BC847AW
1E
BC847BW
1F
BC847CW
1G
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