파트넘버.co.kr BC848BW 데이터시트 PDF


BC848BW 반도체 회로 부품 판매점

NPN Transistor



Taiwan Semiconductor 로고
Taiwan Semiconductor
BC848BW 데이터시트, 핀배열, 회로
Small Signal Product
NPN Transistor
BC846AW - BC850CW
Taiwan Semiconductor
FEATURES
- Low reverse current, high reliability
- Surface device type mounting
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOT-323
MECHANICAL DATA
- Case: SOT-323 small outline plastic package
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Weight: 5 ± 0.5 mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
BC846AW/BW/CW
PD
200
80
BC847AW/BW/CW
50
Collector-Base Voltage
BC848AW/BW/CW
BC849AW/BW/CW
VCBO
30
30
BC850AW/BW/CW
50
BC846AW/BW/CW
65
BC847AW/BW/CW
45
Collector-Emitter Voltage
BC848AW/BW/CW
VCEO
30
BC849AW/BW/CW
30
BC850AW/BW/CW
45
BC846AW/BW/CW
6
BC847AW/BW/CW
6
Emitter-Base Voltage
BC848AW/BW/CW
VEBO
5
BC849AW/BW/CW
5
BC850AW/BW/CW
5
Collector Current
Peak Collector Current
Junction and Storage Temperature Range
IC
ICM
TJ , TSTG
0.1
0.2
-55 to + 150
UNIT
mW
V
V
V
A
A
°C
Document Number: DS_S1502002
Version: B15


BC848BW 데이터시트, 핀배열, 회로
Small Signal Product
BC846AW - BC850CW
Taiwan Semiconductor
PARAMETER
Collector-Base Breakdown Voltage
BC846AW/BW/CW
at IC= 10 μA
BC847AW/BW/CW
BC848AW/BW/CW
BC849AW/BW/CW
BC850AW/BW/CW
Collector-Emitter Breakdown Voltage
BC846AW/BW/CW
at IC= 10 mA
BC847AW/BW/CW
BC848AW/BW/CW
BC849AW/BW/CW
BC850AW/BW/CW
Emitter-Base Breakdown Voltage
BC846AW/BW/CW
at IE= 1 μA
BC847AW/BW/CW
BC848AW/BW/CW
BC849AW/BW/CW
BC850AW/BW/CW
Collector Cut-off Current at VCB = 30 V
Emitter Cut-off Current at VEB= 5 V
DC Current Gain
at VCE= 5 V , IC= 2 mA
BC846AW - BC850AW
BC846BW - BC850BW
BC846CW - BC850CW
Collector-Emitter Saturation Voltage
Transition Frequency
Base Emitter Voltage
Collector Output Capacitance
IC= 10mA , IB = 0.5 mA
IC= 100mA , IB = 5 mA
VCE = 5 V , IC = 10 mA , f = 100 MHz
VCE= 5 V , IC = 2 mA
VCE= 5 V , IC = 10 mA
VCB = 10 V , IE = 0 , f = 1MHz
SYMBOL
VCBO
V(BR)CEO
VEBO
ICBO
IEBO
hFE
VCE(sat)
fT
VBE
Cob
MIN
80
50
30
30
50
65
45
30
30
45
6
6
5
5
5
-
-
110
200
420
-
-
100
0.58
-
-
MAX
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
15
100
220
450
800
0.25
0.60
-
0.70
0.77
4.50
UNIT
V
V
V
nA
nA
-
-
-
V
MHz
V
pF
Document Number: DS_S1502002
Version: B15




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BC848BW transistor

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