파트넘버.co.kr BC817-16W 데이터시트 PDF


BC817-16W 반도체 회로 부품 판매점

PNP Small Signal Transistor



Taiwan Semiconductor 로고
Taiwan Semiconductor
BC817-16W 데이터시트, 핀배열, 회로
Small Signal Product
BC817-16W/25W/40W
Taiwan Semiconductor
200mW, PNP Small Signal Transistor
FEATURES
- Epitaxial planar die construction
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free and RoHS complian
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
- Case: SOT- 323 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 0.005 grams (approximately)
SOT-323
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature Range
Notes: 1. Transistor mounted on a FR4 printed-circuit board
PD
VCBO
VCEO
VEBO
IC
RθJA
TJ , TSTG
200
50
45
5
0.5
625
-55 to + 150
UNIT
mW
V
V
V
A
K/W
°C
PARAMETER
SYMBOL
Collector-Base Breakdown Voltage
at IC = 10 µA
Collector-Emitter Breakdown Voltage
at IC = 10 mA
Emitter-Base Breakdown Voltage
at IE = 10 µA
Collector Cut-off Current
at VCB = 20 V
Emitter Cut-off Current
at VEB = 5 V
Collector-Emitter Saturation Voltage
at IC = 500mA IB = 50 mA
Transition Frequency
VCE = 5 V IC = 10 mA f = 100MHz
at VCE = 1 V , IC = 100 mA
-16W
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
fT
DC Current Gain
-25W
-40W
hFE
at VCE = 1 V , IC = 500 mA
MIN
50
45
5
-
-
-
100
100
160
250
40
MAX
-
-
-
100
100
0.7
-
250
400
600
UNIT
V
V
V
nA
nA
V
MHz
Document Number: DS_S1404010
Version: C14


BC817-16W 데이터시트, 핀배열, 회로
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
300
250
200
150
100
50
0
0
Fig.1Total Power Dissipation Ptot = f (TS)
20 40 60 80 100 120 140
TS ( oC)
BC817-16W/25W/40W
Taiwan Semiconductor
1000.0
Fig.2 Permissible Pulse Load RθJA = f (tp)
100.0
10.0
1.0
0.1
1
0.5
0.2
0.1
0.05
0.02
0.01
D=0
10 100 1000 10000 100000 1000000
tp (µs)
1000
100
Fig.3 Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
D=0
0.005
0.01
0.02
0.05
10
0.1
0.2
0.5
1
1.E+00 1.E+01
1.E+02
1.E+03
tp t(pµs(s) )
1.E+04
1.E+05
1.E+06
100000
Fig. 4 Coolector Cutoff Current ICBO = f (TA)
VCB=25V
10000
1000
max
100 typ
10
1
0
50 100
TA ( oC)
150
Document Number: DS_S1404010
Version: C14




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BC817-16W transistor

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