BC807-16 반도체 회로 부품 판매점
PNP Plastic-Encasulate Transistor
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 Taiwan Semiconductor |
BC807-16/-25/-40
Taiwan Semiconductor
Small Signal Product
0.3 Watts, PNP Plastic-Encasulate Transistor
FEATURES
- Ideally suited for automatic insertion
- Epitaxial planar die construction
- For switching, AF driver and amplifer applications
- Complementary NPN type available (BC817)
MECHANICAL DATA
- Case: SOT- 23, Molded plastic
- Terminal: Solderable per MIL-STD-202, method 208
- Case material: Molded plastic, UL flammability
classification rating 94V-0
- Moisture sensitivity: Level 1 per J-STD-020C
- Lead free plating
- Weight: 0.008grams (approximately)
SOT-23
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
Collector Current - Continuous
Junction Temperature
Storage Temperature Range
PD
IC
TJ
TSTG
0.3
-0.5
150
-55 to + 150
UNIT
W
A
°C
°C
PARAMETER
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
807-16
IC = -10 µA IE = 0
IC = -10 mA IB = 0
IE = -1 µA IC = 0
VCB = -45 V IE = 0
VCB = -40 V IB = 0
VEB = -4 V IC = 0
at IC = -500mA
IB = 50 mA
at IC = -500 mA IB = 50 mA
VCE = -5 V IC = -10 mA f = 50MHz
VCBO
VCEO
VEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
fT
DC Current Gain
807-25
807-40
VCE = -1 V IC = -100 mA hFE(1)
VALUE
-50
-45
-5
-0.1
-0.2
-0.1
-0.7
-1.2
80
100 250
160 400
250 600
UNIT
V
V
V
µA
µA
µA
V
V
MHz
Document Number: DS_S1404007
Version: F14
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
Fig. 1 Power Derating Curve
400
See Note 1
300
200
100
0
0 50 100 150 200
TSB, Substrate Temperature (oC)
1000
Fig.3 Collector Sat Voltage VS. Collector Current
- 50 oC
100 25 oC
10
150 oC
Typical
- - - - - - - - Limits
at TA = 25 oC
-IC / -IB = 10
1
0.1
0
0.1 0.2 0.3 0.4
-VCESAT , Collector Saturation Voltage (V)
0.5
Fig.5 Typical Emitter-Collector Characterisitcs
500
3.2
1.4
400
2.8 2.4
2.0
1.8
300
200
100
0
0
1.6
1.0 1.2
0.8
0.6
0.4
- IB = 0.2 mA
1
-VCE , Collector-Emitter Voltage (V)
2
Document Number: DS_S1404007
BC807-16/-25/-40
Taiwan Semiconductor
1000
100
Fig. 2 Gain Bandwidth Product VS. Collector Current
-VCE = 5.0 V
-VCE = 1 V
TA = 25 oC
f = 20 MHz
10
1
10 100
IC, Collector Current (mA)
1000
1000
Fig. 4 DC Current Gain VS. Collector Current
150 oC
-VCE = 1V
25 oC
100
- 50 oC
10
0.1
1 10 100
-IC , Collector Current (mA)
1000
100
80
60
40
20
0
0
Fig. 6 Typical Emitter-Collector Characteristics
0.4
0.35
0.3
0.25
0.2
0.15
0.1
- IB = 0.05 mA
10 20
-VCE , Collector-Emitter Voltage (V)
Version: F14
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( taiwan )
BC807-16 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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