BC857BS 반도체 회로 부품 판매점
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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 Diodes |
BC857BS
45V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Ultra-Small Surface Mount Package
• Ideally Suited for Automated Insertion
• For switching and AF Amplifier Application
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP capable (Note 4)
SOT363
C1
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin Finish. Solderable per MIL-STD-
202, Method 208 e3
• Weight: 0.006 grams (approximate)
C2
SOT363
Top View
B1 B2
E1
Device Symbol
E2
Top View
Pin-Out
Ordering Information (Notes 4 & 5)
Product
BC857BS-7-F
BC857BSQ-7-F
BC857BS-13-F
Compliance
AEC-Q101
Automotive
AEC-Q101
Marking
K3W
K3W
K3W
Reel size (inches)
7
7
13
Tape width (mm)
8
8
8
Quantity per reel
3,000
3,000
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
K3W YM
K3W = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
2011
Y
Feb Mar
23
2012
Z
Apr
4
May
5
2013
A
Jun
6
2014
B
2015
C
Jul Aug Sep
78 9
2016
D
2017
E
Oct Nov Dec
OND
BC857BS
Datasheet Number DS30373 Rev. 8 - 2
1 of 5
www.diodes.com
November 2013
© Diodes Incorporated
Absolute Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
Value
-50
-45
-5.0
-100
-200
-200
BC857BS
Unit
V
V
V
mA
mA
mA
Thermal Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient Air (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
200
625
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Emitter Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Symbol
BVCBO
BVCEO
BVEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
ICBO
IEBO
fT
CCBO
CEBO
Min
-50
-45
-5
220
—
—
-580
—
—
—
100
—
—
Typ
—
—
—
—
—
-700
-665
—
—
—
—
2
11
Max
—
—
—
475
-100
-400
—
-750
-15
-4.0
-100
—
3
—
Unit
V
V
V
—
mV
mV
mV
nA
µA
nA
MHz
pF
pF
Test Condition
IC = 100µA, IB = 0
IC = 10mA, IB = 0
IE = 100µA, IC = 0
VCE = -5.0V, IC = -2.0mA
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
IC = -10mA, IB = -0.5mA
VCE = -5.0V, IC = -2.0mA
VCB = -30V
VCB = -30V, TA = +150°C
VEB = -5.0V, IC = 0
VCE = -5.0V, IC = -10mA,
f = 100MHz
VCB = -10V, f = 1.0MHz
VEB = -0.5V, f = 1.0MHz
Notes:
6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device
is measured when operating in a steady-state condition.
7. Short duration pulse test used to minimize self-heating effect.
BC857BS
Datasheet Number DS30373 Rev. 8 - 2
2 of 5
www.diodes.com
November 2013
© Diodes Incorporated
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BC857BS transistor
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