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MCC |
MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
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$
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BC847PN
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
x Ideally Suited for Automatic Insertion
x Ultra-Small Surface Mount Package
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Mechanical Data
x Case: SOT-363, Molded Plastic
x MAKING: 7P
PNP and NPN Small
Signal Transistor
200mW
SOT-363
G
BC
Maximum Ratings @ 25к Unless Otherwise Specified
Symbol
Parameter
Value
OFF CHARACTERISTICS
IC Collector Current
100
ICM Peak Collector Current
200
Pd Power Dissipation @ Ts=50к
200
TJ, TSTG
Operating & Storage Temperature
-55~+150
Units
mAdc
mAdc
mW
к
A
H
KM
J
D
L
DIMENSIONS
INCHES
MM
DIM MIN
A .006
MAX MIN MAX NOTE
.014
0.15
0.35
B
.045
.053
1.15
1.35
C
.085
.096
2.15
2.45
D .026
0.65Nominal
G
.047
.055
1.20
1.40
H
.071
.087
1.80
2.20
J --- .004 --- 0.10
K
.035
.043
0.90
1.10
L
.010
.018
0.26
0.46
M
.003
.006
0.08
0.15
Revision: A
www.mccsemi.com
1 of 5
2011/01/01
BC847PN
CHARACTERISTICS of NPN Transistor (Tamb=25Я
MCC
TM
Micro Commercial Components
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Noise figure
Symbol Test conditions
V(BR)CBO Ic=10µA,IE=0
V(BR)CEO Ic=10mA,IB=0
V(BR)EBO IE=1µA,IC=0
ICBO
VCB=30V,IE=0
IEBO VEB=5V,IC=0
hFE1
VCE=5V,IC=2mA
VCE(sat) IC=10mA,IB=0.5mA
VCE(sat) IC=100mA,IB=5mA
VBE(sat) IC=10mA,IB=0.5mA
VBE(sat) IC=100mA,IB=5mA
VBEon VCE=5V,IC=2mA
VBEon VCE=5V,IC=10mA
Cob VCB=10V,IE=0,f=1MHz
fT VCE=5V,IC=10mA,f=100MHz
VCE=5V,Ic=0.2mA,
NF
f=1kHZ,Rg=2Kȍ,¨f=200Hz
MIN TYP MAX UNIT
50 V
45 V
6V
15 nA
100 nA
200 450
0.25 V
0.6 V
0.7 V
0.9 V
0.58 0.7 V
0.72 V
6.0 pF
100 MHz
10 dB
CHARACTERISTICS of PNP Transistor (Tamb=25Я unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Noise figure
Symbol Test conditions
MIN TYP MAX UNIT
V(BR)CBO Ic=-10µA,IE=0
-50
V
V(BR)CEO Ic=-10mA,IB=0
-45
V
V(BR)EBO IE=-1µA,IC=0
-5 V
ICBO VCB=-30V,IE=0
-15 nA
IEBO VEB=-5V,IC=0
-100 nA
hFE1 VCE=-5V,IC=-2mA
220 475
VCE(sat) IC=-10mA,IB=-0.5mA
-0.3 V
VCE(sat) IC=-100mA,IB=-5mA
-0.65 V
VBE(sat) IC=-10mA,IB=-0.5mA
-0.7 V
VBE(sat) IC=-100mA,IB=-5mA
-0.95 V
VBEon VCE=-5V,IC=-2mA
-0.6 -0.75 V
VBEon VCE=-5V,IC=-10mA
-0.82 V
Cob VCB=-10V,IE=0,f=1MHz
4.5 pF
fT VCE=-5V,IC=-10mA,f=100MHz 100
MHz
NF VCE=-5V,Ic=-0.2mA,
f=1kHZ,Rg=2Kȍ,¨f=200Hz
10 dB
Revision: A
www.mccsemi.com
2 of 5
2011/01/01
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