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WEJ |
RoHS
KTA1666
KTA1666 TRANSISTOR (PNP)
SOT-89
DFEATURES
Power dissipation
TPCM: 0.5 W (Tamb=25℃)
.,LCollector current
ICM:
Collector-base voltage
-2 A
OV(BR)CBO:
-50 V
Operating and storage junction temperature range
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
CTJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
ICParameter
Symbol
unless otherwise specified)
Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=-1mA, IE=0
-50
V
NCollector-emitter breakdown voltage
V(BR)CEO
Ic=-10mA, IB=0
-50
V
OEmitter-base breakdown voltage
V(BR)EBO
IE=-1mA, IC=0
-5
V
Collector cut-off current
ICBO VCB=-50V, IE=0
-0.1 µA
REmitter cut-off current
IEBO VEB=-5V, IC=0
-0.1 µA
CTDC current gain
hFE(1)
hFE(2)
VCE=-2V, IC=-500mA
VCE=-2V, IC=-1.5A
70
40
240
ECollector-emitter saturation voltage
VCE(sat)
IC=-1A, IB=-50mA
-0.5 V
LBase-emitter saturation voltage
VBE(sat)
IC=-1A, IB=-50mA
-1.2 V
Transition frequency
fT VCE=-2V, IC=-500mA
120 MHz
ECollector output capacitance
Cob VCB=-10V, IE=0, f=1MHz
40 pF
J Turn on Time
ton
0.1
ESwitching Time
Storage Time
tstg
VCC=30V, IC=1A, IB1=-IB2=-0.05A
1.0
µs
W Fall Time
tf
0.1
CLASSIFICATION OF hFE(1)
Rank
O
Y
Range
70-140
120-240
Marking
WO
WY
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