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KEC |
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES
ᴌ1W (Mounted on Ceramic Substrate).
ᴌSmall Flat Package.
ᴌComplementary to KTC4376.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IB
PC
PC*
Tj
-35
-30
-5
-800
-160
500
1
150
Storage Temperature Range
Tstg -55ᴕ150
PC* : KTA1664 mounted on ceramic substrate (250mm2x0.8t)
UNIT
V
V
V
mA
mA
mW
W
ᴱ
ᴱ
KTA1664
EPITAXIAL PLANAR PNP TRANSISTOR
AC
H
G
DD
K
FF
1 23
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
hFE Rank
Lot No.
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ICBO
IEBO
V(BR)CEO
hFE(1) (Note)
hFE(2)
VCE(sat)
VBE
fT
Collector Output Capacitance
Cob
Note : hFE Classification O:100ᴕ200, Y:160ᴕ320
TEST CONDITION
VCB=-35V, IE=0
VEB=-5V, IC=0
IC=-10mA, IB=0
VCE=-1V, IC=-100mA
VCE=-1V, IC=-700mA
IC=-500mA, IB=-20mA
VCE=-1V, IC=-10mA
VCE=-5V, IC=-10mA
VCB=-10V, IE=0, f=1MHz
1998. 6. 15
Revision No : 2
MIN.
-
-
-30
100
35
-
-0.5
-
-
TYP.
-
-
-
-
-
-
-
120
19
MAX.
-100
-100
-
320
-
-0.7
-0.8
-
-
UNIT
nA
nA
V
V
V
MHz
pF
1/2
KTA1664
-800
-600
-400
I C - VCE
-7mA -6mA
-5mA
-4mA
-3mA
-2mA
COMMON EMITTER
Ta=25 C
-200
I B=-1mA
0mA
0
0 -2 -4 -6 -8 -10
COLLECTOR-EMITTER VOLTAGE VCE (V)
1k
500
300
100
50
30
10
-1
h FE - IC
Ta=100 C
Ta=25 C
Ta=-25 C
COMMON EMITTER
VCE =-1V
-3 -10 -30 -100 -300
COLLECTOR CURRENT I C (mA)
-1k
VCE(sat) - I C
-1
COMMON EMITTER
-0.5 IC /I B=25
-0.3
-0.1
-0.05
-0.03
Ta=100 C
Ta=25 C
Ta=-25 C
-0.01
-1
-3 -10 -30 -100 -300
COLLECTOR CURRENT I C (mA)
-1k
I C - VBE
-800
COMMON
-600
EMITTER
VCE =-1V
-400
-200
0
0 -0.4 -0.8 -1.2 -1.6
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
-3k
-1k
-500
-300
-100
I C MAX(PULSE)
IC(CMOANXTINUOUS)
DC OPERATION
1001m0mss
-50 SINGLE NONREPE-
-30 TITIVE PULSE
Ta=25 C
-10
-5
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
-3
-0.3 -1
-3 -10
-30
-100
-300
COLLECTOR-EMITTER VOLTAGE VCE (V)
1998. 6. 15
Revision No : 2
1.2
1
1.0
0.8
Pc - Ta
1 MOUNTED ON CERAMIC
SUBSTRATE(250mm2 x0.8t)
2 Ta=25 C
0.6 2
0.4
0.2
0
0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
2/2
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