KTA1663 반도체 회로 부품 판매점
PNP Transistor
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 Jin Yu Semiconductor |
KTA1663
TRANSISTOR (PNP)
FEATURES
z High current applications
z Complementary to KTC4375
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-30
-30
-5
-1.5
500
150
-55-150
Units
V
V
V
A
mW
℃
℃
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
Cob
IC=-1mA, IE=0
IC=-10mA, IB=0
IE=-1mA, IC=0
VCB=-30V, IE=0
VEB=-5V, IC=0
VCE=-2V, IC=-0.5A
IC=-1.5A, IB=-30mA
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-500mA
VCB=-10V, IE=0,f=1MHz
MIN
-30
-30
-5
100
TYP MAX UNIT
V
V
V
-0.1 μA
-0.1 μA
320
-2 V
-1 V
120 MHz
50 MHz
CLASSIFICATION OF hFE
Rank
Range
O
100-200
Y
160-320
JinYu
semiconductor
www.htsemi.com
Typical Characteristics
KTA1663
JinYu
semiconductor
www.htsemi.com
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제조업체: Jin Yu Semiconductor
( jin-yu )
KTA1663 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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