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WEJ |
RoHS
BCX55
BCX55 TRANSISTOR (NPN)
DFEATURES
TPower dissipation
PCM:
.,LCollector current
ICM:
Collector-base voltage
V(BR)CBO:
0.5
1
60
W (Tamb=25℃)
A
V
OOperating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
NCollector-base breakdown voltage
OCollector-emitter breakdown voltage
REmitter-base breakdown voltage
Collector cut-off current
TEmitter cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Test conditions
Ic=100µA, IE=0
IC= 10mA , IB=0
IE=10µA, IC=0
VCB=30V, IE=0
VEB=5 V, IC=0
MIN MAX UNIT
60 V
60 V
5V
0.1 µA
0.1 µA
LECDC current gain
BCX55
BCX55-10
BCX55-16
ECollector-emitter saturation voltage
JBase-emitter voltage
WETransition frequency
hFE(1)
VCE=2V, IC= 150mA
63 250
63 160
100 250
hFE(2)
hFE(3)
VCE=2V, IC= 5mA
VCE=2V, IC= 500mA
40
25
VCE(sat) IC=500 mA, IB= 50mA
0.5
VBE(ON)
IC= 500 mA, VCE=2V
1
V
V
VCE= 10V, IC= 50mA
fT
f = 100MHz
130
MHz
DEVICE MARKING
BCX55=BE BCX55-10=BG BCX55-16=BM
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