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TAITRON |
Darlington Power Transistors (NPN)
TIP110/111/112
Darlington Power Transistors (NPN)
Features
• Designed for general-purpose amplifier and low speed
switching applications
• RoHS Compliant
Mechanical Data
Case:
Terminals:
Weight:
TO-220, Plastic Package
Solderable per MIL-STD-202, Method 208
0.08 ounces, 2.24 grams
TO-220
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
TIP110
VCBO
Collector-Base Voltage
60
VCEO
Collector-Emitter Voltage
60
VEBO
Emitter-Base Voltage
IC Collector Current Continuous
ICM Collector Current Peak
IB Base Current
Power Dissipation upto TC=25°C
PD Power Dissipation upto TA=25°C
RθJA
RθJC
TJ, TSTG
Power Dissipation Derate above TA=25°C
Thermal Resistance from Junction to Ambient in Free Air
Thermal Resistance from Junction to Case
Operating Junction and Storage Temperature Range
TIP111
80
80
5.0
2.0
4.0
50
50
2.0
16
62.5
2.5
-65 to +150
TIP112
100
100
Unit
V
V
V
A
A
mA
W
W
mW/° C
° C /W
° C /W
°C
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFA (800)-824-8329 (661)-257-6415
Rev. A/AH 2008-06-13
Page 1 of 4
Darlington Power Transistors (NPN)
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
TIP110/111/112
Symbol
Description
*hFE
D.C. Current Gain
*VCEO(sus)
Collector-Emitter Sustaining
Voltage
TIP110
TIP111
TIP112
*VCE(sat) Collector-Emitter Saturation Voltage
*VBE(on) Base-Emitter On Voltage
ICEO
Collector-Emitter Cut-off Current
ICBO
Collector-Base Cut-off Current
IEBO
Emitter-Base Cut-off Current
*Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Min.
1000
500
60
80
100
-
-
-
-
-
Max.
-
-
-
-
-
2.5
2.8
2.0
1.0
2.0
Unit
Conditions
VCE=4V, IC=1A
VCE=4V, IC=2A
V
V IC=30mA, IB=0
V
V IC=2A, IB=8mA
V IC=2A, VCE=4V
mA VCE=Half Rated VCEO
mA VCB=Half Rated VCBO
mA VEB=5V, IC=0
www.taitroncomponents.com
Rev. A/AH 2008-06-13
Page 2 of 4
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