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STU03N20 반도체 회로 부품 판매점

N-Channel Logic Level Enhancement Mode Field Effect Transistor



SamHop Microelectronics 로고
SamHop Microelectronics
STU03N20 데이터시트, 핀배열, 회로
STU03N20
Sa mHop Microelectronics C orp.
STD03N20Green
Product
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Max
200V
3.28 @ VGS=10V
2A
3.59 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous c
IDM -Pulsed a c
TC=25°C
TC=70°C
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
200
±20
2
1.6
5.8
4
42
27
-55 to 150
3
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Jun,03,2014
www.samhop.com.tw


STU03N20 데이터시트, 핀배열, 회로
STU03N20
STD03N20
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=160V , VGS=0V
VGS= ±20V , VDS=0V
200
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=1A
VGS=4.5V , ID=1A
VDS=10V , ID=1A
VDS=25V,VGS=0V
f=1.0MHz
VDD=100V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=100V,ID=1A,VGS=10V
VDS=100V,ID=1A,VGS=4.5V
VDS=100V,ID=1A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)
e.Mounted on FR4 Board of 1 inch2 , 2oz.
Typ
2
2.62
2.66
3.6
276
16
11
8.2
9.2
17.3
2.7
5
2.8
0.9
1.5
0.84
Max Units
1
±100
V
uA
nA
3V
3.28 ohm
3.59 ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
1.3 V
Jun,03,2014
2 www.samhop.com.tw




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STU03N20 transistor

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N-Channel Logic Level Enhancement Mode Field Effect Transistor - SamHop Microelectronics