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PDF BCV47 Data sheet ( Hoja de datos )
| Número de pieza | BCV47 | |
| Descripción | NPN Transistor | |
| Fabricantes | Jin Yu Semiconductor | |
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BCV47
TRANSISTOR (NPN)
FEATURES
High Collector Current
High Current Gain
MARKING:FG
SOT–23
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
80
VCEO Collector-Emitter Voltage
60
VEBO Emitter-Base Voltage
10
IC Collector Current
500
PC Collector Power Dissipation
300
RΘJA Thermal Resistance From Junction To Ambient
416
Tj Junction Temperature
Tstg Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=100µA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=10mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=10µA, IC=0
Collector cut-off current
ICBO
VCB=60V, IE=0
Emitter cut-off current
IEBO VEB=4V, IC=0
hFE(1)
VCE=1V, IC=100µA
DC current gain
hFE(2)
hFE(3)
VCE=5V, IC=10mA
VCE=5V, IC=100mA
hFE(4)
VCE=5V, IC=0.5A
Collector-emitter saturation voltage
VCE(sat) IC=100mA, IB=0.1mA
Base-emitter saturation voltage
VBE(sat) IC=100mA, IB=0.1mA
Transition frequency
fT VCE=5V,IC=50mA, f=100MHz
Collector output capacitance
Cob VCB=10V, IE=0, f=1MHz
Min
80
60
10
2000
4000
10000
2000
Typ
170
3.5
Max
0.1
0.1
1
1.5
Unit
V
V
V
µA
µA
V
V
MHz
pF
JinYu
semiconductor
www.htsemi.com
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