BCM857BV 반도체 회로 부품 판매점
PNP SMALL SIGNAL TRANSISTOR
|
|
 Diodes |
BCM857BV
45V MATCHED PAIR PNP SMALL SIGNAL TRANSISTOR IN SOT563
Features
BVCEO > -45V
IC = -100mA High Collector Current
Pair of PNP Transistors That Are Intrinsically Matched (Note 1)
2% Matching on Current Gain (hFE)
2mV Matching on Base-Emitter Voltage (VBE)
Fully Internally Isolated in a Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 2 & 3)
Halogen and Antimony Free. "Green" Device (Note 4)
Qualified to AEC-Q101 for High Reliability
Mechanical Data
Case: SOT563
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish — Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.003 grams (Approximate)
SOT563
C1 C2
B1 B2
Top View
E1
Device Symbol
E2
Top View
Pin-Out
Ordering Information (Note 5)
Product
BCM857BV-7
Compliance
AEC-Q101
Marking
1U5
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
Notes:
1. Intrinsically matched pair as this is built with adjacent die from the same wafer.
2. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
3. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
4. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT563
1U5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
2015
C
Feb Mar
23
2016
D
Apr
4
2017
E
May Jun
56
2018
F
Jul
7
Aug
8
2019
G
Sep
9
2020
H
2021
I
Oct Nov Dec
OND
BCM857BV
Datasheet number: DS37433 Rev. 3 - 2
1 of 5
www.diodes.com
March 2015
© Diodes Incorporated
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
Value
-50
-45
-5.0
-100
-200
-200
BCM857BV
Unit
V
V
V
mA
mA
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation. Total Device (Note 6)
Power Dissipation. Single Transistor (Note 7)
Thermal Resistance, Junction to Ambient Air (Note 6)
Thermal Resistance, Junction to Ambient Air (Note 7)
Operating and Storage Temperature Range
Symbol
PD
PD
RθJA
RθJA
TJ, TSTG
Value
500
357
+250
+350
-65 to +150
Unit
mW
mW
°C/W
°C/W
°C
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic (Note 9)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
DC Current Gain Matching (Note 10)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Base-Emitter Voltage Matching (Note 11)
Collector Cut-Off Current
Emitter Cut-Off Current
Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Symbol
BVCBO
BVCEO
BVEBO
hFE
hFE1/hFE2
VCE(sat)
VBE(sat)
VBE(on)
VBE1(on) -
VBE2(on)
ICBO
IEBO
fT
CCBO
CEBO
Min
-50
-45
-5
200
0.98
—
—
-600
—
—
—
—
100
—
—
Typ
—
—
—
290
1
-50
-200
-760
-650
—
—
—
—
175
—
10
Max
—
—
—
450
—
-200
-400
—
-700
2
-15
-5.0
-100
—
2.2
—
Unit
V
V
V
—
—
mV
mV
mV
mV
nA
µA
nA
MHz
pF
pF
Test Condition
IC = 100µA, IB = 0
IC = 10mA, IB = 0
IE = 100µA, IC = 0
VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -2.0mA
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
IC = -10mA, IB = -0.5mA
VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -2.0mA
VCB = -30V
VCB = -30V, TA = +150°C
VEB = -5.0V, IC = 0
VCE = -5.0V, IC = -10mA,
f = 100MHz
VCB = -10V, f = 1.0MHz
VEB = -0.5V, f = 1.0MHz
Notes:
6. For a device with two active die running at equal power, mounted on minimum recommended pad layout with 1oz copper that is on a single-sided
1.6mm FR4 PCB; the device is measured under still air conditions whilst operating in a steady-state.
7. Same as Note 6 except for only one active die running.
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
9. Short duration pulse test used to minimize self-heating effect.
10. The smaller of the two values is taken as the numerator.
11. The smaller of the two values is subtracted from the larger value.
BCM857BV
Datasheet number: DS37433 Rev. 3 - 2
2 of 5
www.diodes.com
March 2015
© Diodes Incorporated
|
PDF 파일 내의 페이지 : 총 5 페이지
제조업체: Diodes
( diodes )
BCM857BV transistor
데이터시트 다운로드 :
[ BCM857BV.PDF ]
[ BCM857BV 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
BCM857BS
PNP/PNP matched double transistors - NXP Semiconductors
BCM857BS
45V MATCHED PAIR PNP SMALL SIGNAL TRANSISTOR - Diodes
BCM857BV
PNP/PNP matched double transistors - NXP Semiconductors
BCM857BV
PNP SMALL SIGNAL TRANSISTOR - Diodes