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WEJ |
RoHS
BCX51
BCX51 TRANSISTOR (PNP)
DFEATURES
TPower dissipation
PCM:
.,LCollector current
ICM:
Collector-base voltage
V(BR)CBO:
0.5
-1
-45
W (Tamb=25℃)
A
V
OOperating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
NCollector-base breakdown voltage
OCollector-emitter breakdown voltage
REmitter-base breakdown voltage
Collector cut-off current
TEmitter cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Test conditions
Ic=-100µA, IE=0
IC= -10mA , IB=0
IE=-10µA, IC=0
VCB=-30V, IE=0
VEB=-5V, IC=0
MIN MAX UNIT
-45 V
-45 V
-5 V
-0.1 µA
-0.1 µA
LECDC current gain
BCX51
BCX51-10
BCX51-16
ECollector-emitter saturation voltage
JBase-emitter voltage
WETransition frequency
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VCE=-2V, IC=-150mA
VCE=-2V, IC=- 5mA
VCE=-2V, IC=- 500mA
IC=-500 mA, IB= -50mA
63
63
100
63
40
VBE(ON) IC= -500 mA, VCE=-2V
250
160
250
-0.5
-1
V
V
VCE= -5V, IC=-10mA
fT
f = 100MHz
50
MHz
DEVICE MARKING
BCX51=AA BCX51-10=AC BCX51-16=AD
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