BCW61B 반도체 회로 부품 판매점
PNP TRANSISTOR
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 WEJ |
RoHS
BCW61B
SOT-23 Plastic-Encapsulate Transistors
BCW61B DFEATURES
TRANSISTOR (PNP)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
TPower dissipation
.,LPCM: 0.25 W (Tamb=25℃)
Collector current
OICM: -0.2
Collector-base voltage
A
CV(BR)CBO:
-32 V
Operating and storage junction temperature range
ICTJ, Tstg: -55℃ to +150℃
2. 4
1. 3
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
NParameter
OCollector-base breakdown voltage
RCollector-emitter breakdown voltage
TEmitter-base breakdown voltage
Collector cut-off current
CCollector cut-off current
EDC current gain
LCollector-emitter saturation voltage
EBase-emitter saturation voltage
JTransition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Test conditions
Ic= -10µA, IE=0
Ic= -1mA, IB=0
IE=-10µA, IC=0
VCB=-32V, IE=0
VEB=-4V, IC=0
VCE=-5V, IC= -2mA
IC=-50mA, IB=-1.25mA
IC=-50mA, IB=-1.25mA
VCE= -5V, IC=-10mA
f=100MHz
MIN
-32
-32
-5
180
100
TYP
MAX UNIT
V
V
V
-0.02 µA
-0.02 µA
310
-0.55
-1.05
V
V
MHz
WEMarking
BB
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( wej )
BCW61B transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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