PDF BC846AS Data sheet ( Hoja de datos )

Número de pieza	BC846AS
Descripción	DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Fabricantes	Diodes
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No Preview Available ! BC846AS DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • Ideally Suited for Automatic Insertion • For Switching and AF Amplifier Applications • Complementary PNP Type Available (BC856AS) • Lead Free/RoHS Compliant (Note 1) • "Green" Device (Note 4 and 5) Mechanical Data • Case: SOT-363 • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). • Terminal Connections: See Diagram • Marking Information: See Page 3 • Ordering & Date Code Information: See Page 3 • Weight: 0.006 grams (approximate) A BC H K J C1 6 DF B2 E2 54 L 1 23 E1 B1 C2 SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal M F 0.30 0.40 H 1.80 2.20 J ⎯ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 α 0° 8° All Dimensions in mm Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Emitter Current Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range (Note 2) (Note 2) Symbol VCBO VCEO VEBO IC ICM IEM Pd RθJA Tj, Tstg Value 80 65 6.0 100 200 200 200 625 -65 to +150 Unit V V V mA mA mA mW °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Collector-Cutoff Current Gain Bandwidth Product Collector-Base Capacitance Symbol Min Typ Max Unit Test Condition (Note 3) V(BR)CBO 80 — — V IC = 10μA, IB = 0 (Note 3) V(BR)CEO 65 — — V IC = 10mA, IB = 0 (Note 3) V(BR)EBO 6 —— V IE = 1μA, IC = 0 (Note 3) hFE 110 — 220 — VCE = 5.0V, IC = 2.0mA (Note 3) VCE(SAT) — 90 200 250 600 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA (Note 3) VBE(SAT) — 700 900 — mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA (Note 3) VBE(ON) 580 — 660 — 700 770 mV VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA ICES — — 15 nA VCE = 80V (Note 3) ICBO — — 15 nA VCB = 40V ICBO — — 5.0 µA VCB = 30V, TA = 150°C fT 100 — — MHz VCE = 5.0V, IC = 10mA, f = 100MHz CCB — 2.0 — pF VCB = 10V, f = 1.0MHz Notes: 1. No purposefully added lead. 2. Device mounted on FR-4 PCB, pad layout as shown on page 3 or on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. Short duration pulse test used to minimize self-heating effect. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30833 Rev. 7 - 2 1 of 3 www.diodes.com BC846AS © Diodes Incorporated 1 page

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