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FB1L2Q 반도체 회로 부품 판매점

on-chip resistor NPN silicon epitaxial transistor



NEC 로고
NEC
FB1L2Q 데이터시트, 핀배열, 회로
DATA SHEET
COMPOUND TRANSISTOR
FB1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
FEATURES
• Up to 0.7 A current drive available
• On-chip bias resistor
• Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC Corporation
to know the specification of quality grade on the devices and its
recommended applications.
FB1 SERIES LISTS
Products
Marking
FB1A4A
FB1L2Q
FB1A3M
FB1F3P
FB1J3P
FB1L3N
FB1A4M
P30
P31
P32
P33
P36
P34
P35
R1 (K)
0.47
1.0
2.2
3.3
4.7
10
R2 (K)
10
4.7
1.0
10
10
10
10
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
25
V
Emitter to base voltage
VEBO
10
V
Collector current (DC)
IC(DC)
0.7
A
Collector current (Pulse)
IC(pulse) *
1.0
A
Base current (DC)
IB(DC)
20
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg 55 to +150
°C
* PW10 ms, duty cycle50 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16180EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928


FB1L2Q 데이터시트, 핀배열, 회로
FB1A4A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Collector saturation voltage VCE(sat) **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
** PW 350 µs, duty cycle 2 %
Conditions
VCB = 30 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 0.7 A
IC = 0.5 A, IB = 5 mA
VCE = 5.0 V, IC = 100 µA
FB1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
** PW 350 µs, duty cycle 2 %
Conditions
VCB = 30 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 0.7 A
VIN = 5.0 V, IC = 0.5 A
VCE = 5.0 V, IC = 100 µA
FB1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
** PW 350 µs, duty cycle 2 %
Conditions
VCB = 30 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 0.7 A
VIN = 5.0 V, IC = 0.5 A
VCE = 5.0 V, IC = 100 µA
FB1 SERIES
MIN.
300
300
135
7
TYP.
MAX.
100
0.27
10
0.4
0.3
13
Unit
nA
V
V
k
MIN.
150
300
135
329
3.29
TYP.
400
700
600
0.2
0.62
470
4.7
MAX.
100
0.3
0.3
611
6.11
Unit
nA
V
V
k
MIN.
80
100
135
0.7
0.7
TYP.
MAX.
100
0.3 0.4
0.3
1.0 1.3
1.0 1.3
Unit
nA
V
V
k
k
2 Data Sheet D16180EJ1V0DS




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FB1L2Q

on-chip resistor NPN silicon epitaxial transistor - NEC