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PDF D5929 Data sheet ( Hoja de datos )
| Número de pieza | D5929 | |
| Descripción | Silicon NPN transistor | |
| Fabricantes | PHENITEC SEMICONDUCTOR | |
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D5929
Silicon NPN transistor epitaxial type
D5929
[ Applications ]
Inverter, Strobo flash, DC-DC converter
with small collector-emitter saturation voltage.
Power switching with high collector current.
[ Feature ]
High collector-emitter breakdown voltage BVCEO= 30V
High emitter-base breakdown voltage BVEBO= 9V
Small collector-emitter saturation voltage VCE(sat)= 0.35V(Typ.) at IC= 1.5A, IB= 50mA
[ Absolute maximum ratings (Ta=25C) ]
Characteristic
Symbol Maximum ratings
Collector-base voltage
VCBO
50
Collector-emitter voltage
VCEO
30
Emitter-base voltage
VEBO
9
Collector current
IC 3
Junction temperature
Tj 150
Storage temperature
Tstg -55 to 150
Unit
V
V
V
A
C
C
[ Electrical characteristics (Ta=25C) ]
Characteristic
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 50
-
- V IC= 10uA, IE= 0A
Collector-emitter breakdown voltage BVCEO 30
-
- V IC= 1mA, IB= 0A
Emitter-base breakdown voltage
BVEBO 9
-
- V IE= 10uA, IC= 0A
Collector cut-off current
ICBO
-
- 100 nA VCB= 10V, IE= 0A
Collector cut-off current
ICEO
-
-
1 uA VCE= 10V, IB= 0A
Emitter cut-off current
IEBO
-
- 100 nA VEB= 7V, IE= 0A
DC current gain 1
hFE 1 360 - 760 - VCE= 2V, IC= 0.5A
DC current gain 2
hFE 2 150
-
-
- VCE= 2V, IC= 2A
Collector-emitter saturation voltage VCE(sat) -
0.35 1.1
V IC= 1.5A, IB= 50mA
Transition frequency
f T - 150 - MHz VCE= 6V, IE= -50mA
Collector output capacitance
Cob -
- 50 pF VCB= 10V, f = 1MHz, IE= 0A
Notice 1) These are measured data of transistors assembled by PHENITEC SEMICONDUCTOR Corp. and are for reference only.
Notice 2) The contents described herein are subject to change without notice.
No. D5929-20060821
PHENITEC SEMICONDUCTOR Corp.
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet D5929.PDF ] | |
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