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BLF6G22L-40P 반도체 회로 부품 판매점

Power LDMOS transistor



Ampleon 로고
Ampleon
BLF6G22L-40P 데이터시트, 핀배열, 회로
BLF6G22L-40P;
BLF6G22LS-40P
Power LDMOS transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
LDMOS power transistor for base station applications at frequencies from 2110 MHz to
2170 MHz and 1805 MHz to 1880 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation
f
IDq
VDS PL(AV) Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2110 to 2170
410 28
13.5 19
30 30 [2]
1805 to 1880 [1] 410 28
5
20.3 18.3 34.9 [2]
1-carrier W-CDMA
2110 to 2170 410 28 15
19 32 37 [3]
1805 to 1880 [1] 410 28
5
20.5 18.0 42.3 [3]
[1] The performance is tested on the Class AB demo board as depicted in Figure 11.
[2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
[3] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifier for base stations and multi carrier applications in the 2110 MHz to
2170 MHz frequency band
RF driver amplifier in the 1805 MHz to 1880 MHz frequency band


BLF6G22L-40P 데이터시트, 핀배열, 회로
BLF6G22L-40P; BLF6G22LS-40P
Power LDMOS transistor
2. Pinning information
Table 2. Pinning
Pin Description
BLF6G22L-40P (SOT1121A)
1 drain1
2 drain2
3 gate1
4 gate2
5 source
BLF6G22LS-40P (SOT1121B)
1 drain1
2 drain2
3 gate1
4 gate2
5 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
12
1
3
[1]
5
34
4
5
2
sym117
1
3
5
[1] 4
2
sym117
Table 3. Ordering information
Type number
Package
Name Description
BLF6G22L-40P -
flanged LDMOST ceramic package; 2 mounting holes;
4 leads
BLF6G22LS-40P -
earless flanged LDMOST ceramic package; 4 leads
Version
SOT1121A
SOT1121B
4. Limiting values
Table 4. Limiting values (2 sections combined)
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 65 V
0.5 +13 V
- 16 A
65 +150 C
- 200 C
BLF6G22L-40P_6G22LS-40P#2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
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BLF6G22L-40P transistor

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