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TGS |
TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
C945 TRANSISTOR (NPN )
TO-92
FEATURE
z Excellent hFE linearity
z Low noise
z Complementary to A733
1.EMITTER
2.COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
5
150
400
125
-55-125
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC=1mA , IE=0
60
V
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IC=100μA , IB=0
IE=100 μA, IC=0
VCB=60V, IE=0
VCE=45V, IB=0
50 V
5V
0.1 μA
0.1 μA
IEBO
VEB=5V ,IC=0
0.1 μA
hFE(1)
VCE=6V , IC=1mA
70 700
hFE(2)
VCE=6V , IC=0.1mA
40
VCE(sat)
IC=100mA, IB=10mA
0.3 V
VBE(sat)
IC=100mA, IB=10mA
1V
fT VCE=6V,IC=10mA,f=30MHz 200
MHz
Cob VCB=10V,IE=0,f=1MHz
NF VCE=6V,IC=0.1mA
RG=10kΩ,f=1MHz
3.0 pF
10 dB
CLASSIFICATION OF hFE(1)
Rank
O
Range
70-140
Y
120-240
GR
200-400
BL
350-700
A,Jan,2011
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