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BSP52T3G 반도체 회로 부품 판매점

NPN Small-Signal Darlington Transistor



ON Semiconductor 로고
ON Semiconductor
BSP52T3G 데이터시트, 핀배열, 회로
BSP52T1G, BSP52T3G
NPN Small-Signal
Darlington Transistor
This NPN small signal Darlington transistor is designed for use in
switching applications, such as print hammer, relay, solenoid and lamp
drivers. The device is housed in the SOT-223 package, which is
designed for medium power surface mount applications.
Features
The SOT-223 Package can be soldered using wave or reflow. The
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
Available in 12 mm Tape and Reel
Use BSP52T1 to Order the 7 Inch/1000 Unit Reel
PNP Complement is BSP62T1
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
VCES
VCBO
VEBO
IC
PD
80 V
90 V
5.0 V
1.0 A
0.8 W
6.4 mW/°C
Total Power Dissipation (Note 2)
@ TA = 25°C
Derate above 25°C
PD
1.25 W
10 mW/°C
Operating and Storage
Temperature Range
TJ, Tstg 65 to 150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance (Note 1)
Junction-to-Ambient
RqJA
156 °C/W
Thermal Resistance (Note 2)
Junction-to-Ambient
RqJA
100 °C/W
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
TL
260 °C
10 Sec
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum
recommended footprint.
2. Device mounted on a FR-4 glass epoxy printed circuit board using 1 cm2 pad.
http://onsemi.com
MEDIUM POWER
NPN SILICON
SURFACE MOUNT
DARLINGTON TRANSISTOR
COLLECTOR 2,4
BASE
1
EMITTER 3
4 MARKING DIAGRAM
123
SOT223
CASE 318E
STYLE 1
AYW
AS3G
G
A = Assembly Location
Y = Year
W = Work Week
AS3 = Specific Device Code
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
BSP52T1G
SOT223 1000 / Tape & Reel
(PbFree)
BSP52T3G
SOT223 4000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
January, 2012 Rev. 8
1
Publication Order Number:
BSP52T1/D


BSP52T3G 데이터시트, 핀배열, 회로
BSP52T1G, BSP52T3G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
(IC = 100 mA, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 10 mA, IC = 0)
Collector-Emitter Cutoff Current
(VCE = 80 V, VBE = 0)
Emitter-Base Cutoff Current
(VEB = 4.0 V, IC = 0)
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 150 mA, VCE = 10 V)
(IC = 500 mA, VCE = 10 V)
Collector-Emitter Saturation Voltage
(IC = 500 mA, IB = 0.5 mA)
Base-Emitter Saturation Voltage
(IC = 500 mA, IB = 0.5 mA)
SWITCHING CHARACTERISTICS
Rise Time
(VCC = 10 V, IC = 150 mA, IB1 = 0.15 mA)
Delay Time
(VCC = 10 V, IC = 150 mA, IB1 = 0.15 mA)
Storage Time
(VCC = 10 V, IC = 150 mA, IB1 = 0.15 mA, IB2 = 0.15 mA)
Fall Time
(VCC = 10 V, IC = 150 mA, IB1 = 0.15 mA, IB2 = 0.15 mA)
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%
Symbol
Min
Typ
Max Unit
V(BR)CBO
V
90
V(BR)EBO
V
5.0
ICES
mA
− − 10
IEBO
mA
− − 10
hFE
1000
2000
VCE(sat)
V
1.3
VBE(sat)
V
1.9
tr ns
155
td ns
205
ts ns
420
tf ns
365
http://onsemi.com
2




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